naa a22 4500 510805094 CHVBK 20180411083413.0 cr unu---uuuuu 180411e20131101xx s 000 0 eng 10.1007/s11664-013-2738-1 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2738-1 History of the "Detector Materials Engineering” Crystal Growth Process for Bulk Hg1− x Cd x Te [Elektronische Daten] [W. Higgins, D. Nelson, R. Roy, R. Murosako, R. Lancaster, J. Tower, P. Norton] This paper reviews the history and technology of a bulk Hg1−x Cd x Te crystal growth process that was developed in the early 1980s at Honeywell Electro-Optics Division (presently BAE Systems, Electronic Solutions). The crystal growth process name, DME, was an acronym for the department name: Detector Materials Engineering. This was an accelerated crucible rotation technique (ACRT) vertical traveling heater method growth process. Crystal growth occurred in the pseudobinary Hg1−x Cd x Te system. ACRT mixing allowed the lower-density, higher-x-value Hg1−x Cd x Te growth nutrient in the upper region of the ampoule to replenish the depleted melt and allowed the growth of constant-x-value, higher-density Hg1−x Cd x Te. The material grown by this research and production growth process yielded single crystals that had improved purity, compositional uniformity, precipitate density, and reproducibility in comparison with solid-state recrystallization and other bulk Hg1−x Cd x Te growth techniques. Radial and longitudinal nonuniformities in x-value for Hg1−x Cd x Te were reduced to <0.0008/cm. The net electrically active background impurities did not exceed 1×1014cm−3. Electron mobilities in excess of 1.5×106cm2/V-s were observed at 77K. Structural defects of less than 104cm−2 were measured. Te precipitates were not observed. As a result of these material improvements, long-wavelength infrared (LWIR) photoconductive devices fabricated from DME material had highly desired performance characteristics. TMS, 2013 Hg1− x Cd x Te nationallicence DME nationallicence accelerated crucible rotation technique nationallicence ACRT nationallicence vertical traveling heater method (THM) nationallicence bulk crystal growth nationallicence Higgins W. CapeSym, 6 Huron Drive, 01760, Natick, MA, USA aut Nelson D. Independent Semiconductor Professional, Andover, MA, USA aut Roy R. EIC Laboratories, Inc., 111 Downey Street, 02062, Norwood, MA, USA aut Murosako R. Interactive Data Corporation, 32 Crosby Drive, 01730, Bedford, MA, USA aut Lancaster R. Independent Defense and Space Professional, Barnstable/Yarmouth, MA, USA aut Tower J. Radiation Monitoring Devices, 44 Hunt Street, 02472, Watertown, MA, USA aut Norton P. BAE Systems, 2 Forbes Road, 02421, Lexington, MA, USA aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3320-3330 0361-5235 42:11<3320 2013 42 11664 https://doi.org/10.1007/s11664-013-2738-1 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2738-1 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Higgins W. CapeSym, 6 Huron Drive, 01760, Natick, MA, USA aut NATIONALLICENCE 700 1- Nelson D. Independent Semiconductor Professional, Andover, MA, USA aut NATIONALLICENCE 700 1- Roy R. EIC Laboratories, Inc., 111 Downey Street, 02062, Norwood, MA, USA aut NATIONALLICENCE 700 1- Murosako R. Interactive Data Corporation, 32 Crosby Drive, 01730, Bedford, MA, USA aut NATIONALLICENCE 700 1- Lancaster R. Independent Defense and Space Professional, Barnstable/Yarmouth, MA, USA aut NATIONALLICENCE 700 1- Tower J. Radiation Monitoring Devices, 44 Hunt Street, 02472, Watertown, MA, USA aut NATIONALLICENCE 700 1- Norton P. BAE Systems, 2 Forbes Road, 02421, Lexington, MA, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3320-3330 0361-5235 42:11<3320 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer