naa a22 4500 510805108 CHVBK 20180411083413.0 cr unu---uuuuu 180411e20131101xx s 000 0 eng 10.1007/s11664-013-2697-6 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2697-6 Investigations on a Multiple Mask Technique to Depress Processing-Induced Damage of ICP-Etched HgCdTe Trenches [Elektronische Daten] [Z. Ye, W. Hu, W. Lei, L. Yang, P. Zhang, Y. Huang, C. Lin, C. Sun, X. Hu, R. Ding, X. Chen, W. Lu, L. He] A multiple mask technique, integrating patterned silicon dioxide (SiO2) film over patterned thick photoresist (PR) film, has been investigated as a method to perform mesa etching for device delineation and electrical isolation of mercury cadmium telluride (HgCdTe) third-generation infrared focal-plane arrays. The multiple mask technique was achieved by standard thick PR photolithography, SiO2 film deposition to cover the thick PR patterned film, and etching the SiO2 film at the bottom region after another photolithography process. The dynamic resistance in the zero-bias and low-reverse-bias regions of HgCdTe photodiode arrays isolated by inductively coupled plasma (ICP) etching with the multiple mask of patterned SiO2 and patterned thick PR film underneath was improved one- to twofold compared with a simple mask of patterned SiO2. It is suggested that the multiple mask technique is capable of maintaining high etching selectivity while reducing the side-wall processing-induced damage of ICP-etched HgCdTe trenches. The results show that the multiple mask technique is readily available and shows great promise for etching HgCdTe mesa arrays. TMS, 2013 Mercury cadmium telluride (HgCdTe) nationallicence inductively coupled plasma (ICP) nationallicence processing-induced side-wall damage nationallicence high etching selectivity nationallicence Ye Z. Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut Hu W. National Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut Lei W. School of Electrical, Electronic and Computer Engineering, University of Western Australia, 6009, Crawley, WA, Australia aut Yang L. Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut Zhang P. Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut Huang Y. Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut Lin C. Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut Sun C. Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut Hu X. Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut Ding R. Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut Chen X. National Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut Lu W. National Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut He L. Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3164-3167 0361-5235 42:11<3164 2013 42 11664 https://doi.org/10.1007/s11664-013-2697-6 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2697-6 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Ye Z. Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut NATIONALLICENCE 700 1- Hu W. National Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut NATIONALLICENCE 700 1- Lei W. School of Electrical, Electronic and Computer Engineering, University of Western Australia, 6009, Crawley, WA, Australia aut NATIONALLICENCE 700 1- Yang L. Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut NATIONALLICENCE 700 1- Zhang P. Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut NATIONALLICENCE 700 1- Huang Y. Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut NATIONALLICENCE 700 1- Lin C. Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut NATIONALLICENCE 700 1- Sun C. Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut NATIONALLICENCE 700 1- Hu X. Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut NATIONALLICENCE 700 1- Ding R. Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut NATIONALLICENCE 700 1- Chen X. National Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut NATIONALLICENCE 700 1- Lu W. National Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut NATIONALLICENCE 700 1- He L. Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3164-3167 0361-5235 42:11<3164 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer