naa a22 4500 510805116 CHVBK 20180411083413.0 cr unu---uuuuu 180411e20131101xx s 000 0 eng 10.1007/s11664-013-2651-7 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2651-7 Fabrication and Simulation of an Indium Gallium Arsenide Quantum-Dot-Gate Field-Effect Transistor (QDG-FET) with ZnMgS as a Tunnel Gate Insulator [Elektronische Daten] [P.-Y. Chan, M. Gogna, E. Suarez, F. Al-Amoody, S. Karmakar, B. Miller, E. Heller, J. Ayers, F. Jain] An indium gallium arsenide quantum-dot-gate field-effect transistor using Zn0.95Mg0.05S as the gate insulator is presented in this paper, showing three output states which can be used in multibit logic applications. The spatial wavefunction switching effect in this transistor has been investigated, and modeling simulations have shown supporting evidence that additional output states can be achieved in one transistor. TMS, 2013 InGaAs MOSFET nationallicence high κ nationallicence ZnMgS gate dielectric nationallicence II-VI insulator nationallicence quantum dot gate nationallicence multistate behavior nationallicence Chan P.-Y Department of Electrical and Computer Engineering, University of Connecticut, 06269-2157, Storrs, CT, USA aut Gogna M. Global Foundries, Inc., 12020, Malta, NY, USA aut Suarez E. Department of Electrical and Computer Engineering, University of Connecticut, 06269-2157, Storrs, CT, USA aut Al-Amoody F. Intel Corporation, 97124, Hillsboro, OR, USA aut Karmakar S. Intel Corporation, 97124, Hillsboro, OR, USA aut Miller B. Department of Electrical and Computer Engineering, University of Connecticut, 06269-2157, Storrs, CT, USA aut Heller E. Synopsys, Inc., 10562, Ossining, NY, USA aut Ayers J. Department of Electrical and Computer Engineering, University of Connecticut, 06269-2157, Storrs, CT, USA aut Jain F. Department of Electrical and Computer Engineering, University of Connecticut, 06269-2157, Storrs, CT, USA aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3259-3266 0361-5235 42:11<3259 2013 42 11664 https://doi.org/10.1007/s11664-013-2651-7 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2651-7 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Chan P.-Y Department of Electrical and Computer Engineering, University of Connecticut, 06269-2157, Storrs, CT, USA aut NATIONALLICENCE 700 1- Gogna M. Global Foundries, Inc., 12020, Malta, NY, USA aut NATIONALLICENCE 700 1- Suarez E. Department of Electrical and Computer Engineering, University of Connecticut, 06269-2157, Storrs, CT, USA aut NATIONALLICENCE 700 1- Al-Amoody F. Intel Corporation, 97124, Hillsboro, OR, USA aut NATIONALLICENCE 700 1- Karmakar S. Intel Corporation, 97124, Hillsboro, OR, USA aut NATIONALLICENCE 700 1- Miller B. Department of Electrical and Computer Engineering, University of Connecticut, 06269-2157, Storrs, CT, USA aut NATIONALLICENCE 700 1- Heller E. Synopsys, Inc., 10562, Ossining, NY, USA aut NATIONALLICENCE 700 1- Ayers J. Department of Electrical and Computer Engineering, University of Connecticut, 06269-2157, Storrs, CT, USA aut NATIONALLICENCE 700 1- Jain F. Department of Electrical and Computer Engineering, University of Connecticut, 06269-2157, Storrs, CT, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3259-3266 0361-5235 42:11<3259 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer