naa a22 4500 510805124 CHVBK 20180411083413.0 cr unu---uuuuu 180411e20131101xx s 000 0 eng 10.1007/s11664-013-2782-x doi (NATIONALLICENCE)springer-10.1007/s11664-013-2782-x Correlations of Bridgman-Grown Cd0.9Zn0.1Te Propertieswith Different Ampoule Rotation Schemes [Elektronische Daten] [Amlan Datta, Santosh Swain, Yunlong Cui, Arnold Burger, Kelvin Lynn] A unique ampoule rotation system was developed at the Center for Materials Research at Washington State University for enhancing convection in the cadmium zinc telluride (CZT) melt by applying different ampoule rotation schemes (RS). Experiments were performed with different initial charge material concentrations and rotation parameters (acceleration, speed, rotation time, etc.). The applied speed and acceleration ranged from 30rpm to 50rpm and 30rpm2 to 200rpm2, respectively. Zinc (Zn) distribution profiles of radial and axial slices from the same regions in the grown ingot were determined by room-temperature photoluminescence mapping. The results demonstrate the effects of ampoule rotation on Zn segregation and growth interface evolution. The most stable interface propagation was obtained when 0.2atomic percent (at.%) excess tellurium (Te) was used in the initial charge material along with a trapezoidal RS. Uniform radial Zn distribution was achieved using triangular RS, which is because of the interface flatness near the axis. Comparison of secondary phase (SP) generation for different RS and initial excess Te was performed. Closed-container CZT growth was performed using the trapezoidal RS, which resulted in high single-crystal yield with lower-diameter SP near the last-to-freeze region. High-resistivity (on the order of 1010Ω-cm) crystals were obtained from all the RS. The mobility-lifetime product (μτ)e of electrons for planar detectors was found to be on the order of 3×10−3cm2/V to 5×10−3cm2/V for all the RS with 3.5at.% excess Te growths. TMS, 2013 CZT nationallicence vertical Bridgman growth nationallicence ACRT nationallicence zinc segregation nationallicence photoluminescence studies nationallicence tellurium secondary phase nationallicence Datta Amlan Center for Materials Research, Washington State University, 99163, Pullman, WA, USA aut Swain Santosh Center for Materials Research, Washington State University, 99163, Pullman, WA, USA aut Cui Yunlong Department of Life and Physical Sciences, Fisk University, 37208, Nashville, TN, USA aut Burger Arnold Department of Life and Physical Sciences, Fisk University, 37208, Nashville, TN, USA aut Lynn Kelvin Center for Materials Research, Washington State University, 99163, Pullman, WA, USA aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3041-3053 0361-5235 42:11<3041 2013 42 11664 https://doi.org/10.1007/s11664-013-2782-x text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2782-x text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Datta Amlan Center for Materials Research, Washington State University, 99163, Pullman, WA, USA aut NATIONALLICENCE 700 1- Swain Santosh Center for Materials Research, Washington State University, 99163, Pullman, WA, USA aut NATIONALLICENCE 700 1- Cui Yunlong Department of Life and Physical Sciences, Fisk University, 37208, Nashville, TN, USA aut NATIONALLICENCE 700 1- Burger Arnold Department of Life and Physical Sciences, Fisk University, 37208, Nashville, TN, USA aut NATIONALLICENCE 700 1- Lynn Kelvin Center for Materials Research, Washington State University, 99163, Pullman, WA, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3041-3053 0361-5235 42:11<3041 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer