naa a22 4500 510805132 CHVBK 20180411083413.0 cr unu---uuuuu 180411e20131101xx s 000 0 eng 10.1007/s11664-013-2713-x doi (NATIONALLICENCE)springer-10.1007/s11664-013-2713-x Voltage-Dependent Charge Storage in Cladded Zn0.56Cd0.44Se Quantum Dot MOS Capacitors for Multibit Memory Applications [Elektronische Daten] [J. Khan, M. Lingalugari, F. Al-Amoody, F. Jain] As conventional memories approach scaling limitations, new storage methods must be utilized to increase Si yield and produce higher on-chip memory density. Use of II-VI Zn0.56Cd0.44Se quantum dots (QDs) is compatible with epitaxial gate insulators such as ZnS-ZnMgS. Voltage-dependent charging effects in cladded Zn0.56Cd0.44Se QDs are presented in a conventional metal-oxide-semiconductor capacitor structure. Charge storage capabilities in Si and ZnMgS QDs have been reported by various researchers; this work is focused on II-VI material Zn0.56Cd0.44Se QDs nucleated using photoassisted microwave plasma metalorganic chemical vapor deposition. Using capacitance-voltage hysteresis characterization, the multistep charging and discharging capabilities of the QDs at room temperature are presented. Three charging states are presented within a 10V charging voltage range. These characteristics exemplify discrete charge states in the QD layer, perfect for multibit, QD-functionalized high-density memory applications. Multiple charge states with low operating voltage provide device characteristics that can be used for multibit storage by allowing varying charges to be stored in a QD layer based on the applied "write” voltage. TMS, 2013 II-VI quantum dots nationallicence multi-bit memory nationallicence capacitance-voltage characterization nationallicence quantum dot super lattice nationallicence hysteresis nationallicence Khan J. Department of Electrical and Computer Engineering, University of Connecticut, 06269-2157, Storrs, CT, USA aut Lingalugari M. Department of Electrical and Computer Engineering, University of Connecticut, 06269-2157, Storrs, CT, USA aut Al-Amoody F. Department of Electrical and Computer Engineering, University of Connecticut, 06269-2157, Storrs, CT, USA aut Jain F. Department of Electrical and Computer Engineering, University of Connecticut, 06269-2157, Storrs, CT, USA aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3267-3274 0361-5235 42:11<3267 2013 42 11664 https://doi.org/10.1007/s11664-013-2713-x text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2713-x text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Khan J. Department of Electrical and Computer Engineering, University of Connecticut, 06269-2157, Storrs, CT, USA aut NATIONALLICENCE 700 1- Lingalugari M. Department of Electrical and Computer Engineering, University of Connecticut, 06269-2157, Storrs, CT, USA aut NATIONALLICENCE 700 1- Al-Amoody F. Department of Electrical and Computer Engineering, University of Connecticut, 06269-2157, Storrs, CT, USA aut NATIONALLICENCE 700 1- Jain F. Department of Electrical and Computer Engineering, University of Connecticut, 06269-2157, Storrs, CT, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3267-3274 0361-5235 42:11<3267 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer