naa a22 4500 510805140 CHVBK 20180411083413.0 cr unu---uuuuu 180411e20131101xx s 000 0 eng 10.1007/s11664-013-2729-2 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2729-2 Tuning Between Quantum-Dot- and Quantum-Well-Like Behaviors in TypeII ZnTe Submonolayer Quantum Dots by Controlling Tellurium Flux During MBE Growth [Elektronische Daten] [H. Ji, B. Roy, S. Dhomkar, R. Moug, M. Tamargo, A. Wang, I. Kuskovsky] We report tuning of properties of typeII nanostructures between quantum dot (QD)-like and quantum well (QW)-like behaviors in ZnSe layers with ZnTe submonolayer insertions, grown by migration-enhanced epitaxy. The sizes of QDs are estimated from magneto-photoluminescence (PL) measurements, which showed no significant change in the QD lateral size with increasing Te flux, indicating increase in QD density instead. The area density of QDs is estimated from the results of secondary-ion mass spectrometry measurements. It is determined that, in the sample grown using the highest Te flux, the electronic wavefunctions begin to overlap, leading to QW-like behavior before the formation of a full QW layer. This is also confirmed via temperature-dependent time-resolved PL, which showed significant change of excitonic lifetimes and binding energies of typeII excitons. TMS, 2013 TypeII heterostructures nationallicence submonolayer quantum dots nationallicence Zn-Se-Te nationallicence MBE nationallicence excitonic lifetime nationallicence quantum well nationallicence Ji H. Queens College of CUNY, 11367, Flushing, NY, USA aut Roy B. Queens College of CUNY, 11367, Flushing, NY, USA aut Dhomkar S. Queens College of CUNY, 11367, Flushing, NY, USA aut Moug R. City College of CUNY, 10031, New York, NY, USA aut Tamargo M. City College of CUNY, 10031, New York, NY, USA aut Wang A. Evans Analytical Group, 94086, Sunnyvale, CA, USA aut Kuskovsky I. Queens College of CUNY, 11367, Flushing, NY, USA aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3297-3302 0361-5235 42:11<3297 2013 42 11664 https://doi.org/10.1007/s11664-013-2729-2 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2729-2 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Ji H. Queens College of CUNY, 11367, Flushing, NY, USA aut NATIONALLICENCE 700 1- Roy B. Queens College of CUNY, 11367, Flushing, NY, USA aut NATIONALLICENCE 700 1- Dhomkar S. Queens College of CUNY, 11367, Flushing, NY, USA aut NATIONALLICENCE 700 1- Moug R. City College of CUNY, 10031, New York, NY, USA aut NATIONALLICENCE 700 1- Tamargo M. City College of CUNY, 10031, New York, NY, USA aut NATIONALLICENCE 700 1- Wang A. Evans Analytical Group, 94086, Sunnyvale, CA, USA aut NATIONALLICENCE 700 1- Kuskovsky I. Queens College of CUNY, 11367, Flushing, NY, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3297-3302 0361-5235 42:11<3297 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer