naa a22 4500 510805159 CHVBK 20180411083413.0 cr unu---uuuuu 180411e20131101xx s 000 0 eng 10.1007/s11664-013-2628-6 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2628-6 Effect of Epilayer Tilt on Dynamical X-ray Diffraction from Uniform Heterostructures with Asymmetric Dislocation Densities [Elektronische Daten] [P.B. Rago, F.C. Jain, J.E. Ayers] In this work we extend the dynamical theory of Bragg x-ray diffraction to account for a tilted, asymmetrically defected, uniform-composition epitaxial layer atop a (001) substrate. In a zincblende semiconductor there are eight active slip systems, within which two distinct types of dislocations exist. These two types are distinguished by their misfit segments, which are oriented along either the [110] or $$[1\bar{1}0]$$ [ 1 1 ¯ 0 ] direction. The two threading dislocation densities can be measured by observing the variation of the x-ray rocking curve width with the incident beam azimuth. However, the tilting of the epilayer also has a measurable and potentially conflicting effect on the rocking curve as a function of azimuth. First, the peak position varies by (nominally) twice the layer's absolute tilt within a full azimuthal rotation. Second, the tilting of the layer affects the epilayer rocking curve width. Through use of the modified dynamical diffraction theory, we show that the peak width's azimuthal dependence on tilt is of only second order, so that the layer misorientation with respect to the substrate need not be considered for the purpose of determining the two dislocation populations by x-ray diffraction. Dynamical simulations were performed and compared with experimental measurements for a ZnSe/GaAs(001) structure grown by photoassisted metalorganic vapor-phase epitaxy, and in this way the two dislocation density populations were found to be D A=1.6×108cm−2 and D B=2.0×108cm−2. TMS, 2013 x-ray diffraction nationallicence dynamical theory nationallicence ZnSe nationallicence HgCdTe nationallicence dislocations nationallicence epitaxial layer tilt nationallicence asymmetric dislocation densities nationallicence Rago P.B. Electrical and Computer Engineering Department, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-2157, Storrs, CT, USA aut Jain F.C. Electrical and Computer Engineering Department, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-2157, Storrs, CT, USA aut Ayers J.E. Electrical and Computer Engineering Department, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-2157, Storrs, CT, USA aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3066-3070 0361-5235 42:11<3066 2013 42 11664 https://doi.org/10.1007/s11664-013-2628-6 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2628-6 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Rago P.B. Electrical and Computer Engineering Department, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-2157, Storrs, CT, USA aut NATIONALLICENCE 700 1- Jain F.C. Electrical and Computer Engineering Department, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-2157, Storrs, CT, USA aut NATIONALLICENCE 700 1- Ayers J.E. Electrical and Computer Engineering Department, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-2157, Storrs, CT, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3066-3070 0361-5235 42:11<3066 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer