naa a22 4500 510805175 CHVBK 20180411083413.0 cr unu---uuuuu 180411e20131101xx s 000 0 eng 10.1007/s11664-013-2691-z doi (NATIONALLICENCE)springer-10.1007/s11664-013-2691-z Analysis of Mesa Dislocation Gettering in HgCdTe/CdTe/Si(211) by Scanning Transmission Electron Microscopy [Elektronische Daten] [R. Jacobs, A. Stoltz, J. Benson, P. Smith, C. Lennon, L. Almeida, S. Farrell, P. Wijewarnasuriya, G. Brill, Y. Chen, M. Salmon, J. Zu] Due to its strong infrared absorption and variable band-gap, HgCdTe is the ideal detector material for high-performance infrared focal-plane arrays (IRFPAs). Next-generation IRFPAs will utilize dual-color high-definition formats on large-area substrates such as Si or GaAs. However, heteroepitaxial growth on these substrates is plagued by high densities of lattice-mismatch-induced threading dislocations (TDs) that ultimately reduce IRFPA operability. Previously we demonstrated a postgrowth technique with the potential to eliminate or move TDs such that they have less impact on detector operability. In this technique, highly reticulated mesa structures are produced in as-grown HgCdTe epilayers, and then subjected to thermal cycle annealing. To fully exploit this technique, better understanding of the inherent mechanism is required. In this work, we employ scanning transmission electron microscopy (STEM) analysis of HgCdTe/CdTe/Si(211) samples prepared by focused ion beam milling. A key factor is the use of defect-decorated samples, which allows for a correlation of etch pits observed on the surface with underlying dislocation segments viewed in cross-section STEM images. We perform an analysis of these dislocations in terms of the general distribution, density, and mobility at various locations within the mesa structures. Based on our observations, we suggest factors that contribute to the underlying mechanism for dislocation gettering. TMS (outside the USA), 2013 HgCdTe thin films nationallicence dislocations nationallicence etch pit density nationallicence STEM nationallicence lattice-mismatched substrates nationallicence FIB nationallicence Jacobs R. U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, 22060, Fort Belvoir, VA, USA aut Stoltz A. U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, 22060, Fort Belvoir, VA, USA aut Benson J. U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, 22060, Fort Belvoir, VA, USA aut Smith P. U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, 22060, Fort Belvoir, VA, USA aut Lennon C. U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, 22060, Fort Belvoir, VA, USA aut Almeida L. U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, 22060, Fort Belvoir, VA, USA aut Farrell S. U.S. Army Research Laboratory, 20783, Adelphi, MD, USA aut Wijewarnasuriya P. U.S. Army Research Laboratory, 20783, Adelphi, MD, USA aut Brill G. U.S. Army Research Laboratory, 20783, Adelphi, MD, USA aut Chen Y. U.S. Army Research Laboratory, 20783, Adelphi, MD, USA aut Salmon M. Evans Analytical Group, Inc., 27606, Raleigh, NC, USA aut Zu J. Evans Analytical Group, Inc., 27606, Raleigh, NC, USA aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3148-3155 0361-5235 42:11<3148 2013 42 11664 https://doi.org/10.1007/s11664-013-2691-z text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2691-z text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Jacobs R. U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, 22060, Fort Belvoir, VA, USA aut NATIONALLICENCE 700 1- Stoltz A. U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, 22060, Fort Belvoir, VA, USA aut NATIONALLICENCE 700 1- Benson J. U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, 22060, Fort Belvoir, VA, USA aut NATIONALLICENCE 700 1- Smith P. U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, 22060, Fort Belvoir, VA, USA aut NATIONALLICENCE 700 1- Lennon C. U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, 22060, Fort Belvoir, VA, USA aut NATIONALLICENCE 700 1- Almeida L. U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, 22060, Fort Belvoir, VA, USA aut NATIONALLICENCE 700 1- Farrell S. U.S. Army Research Laboratory, 20783, Adelphi, MD, USA aut NATIONALLICENCE 700 1- Wijewarnasuriya P. U.S. Army Research Laboratory, 20783, Adelphi, MD, USA aut NATIONALLICENCE 700 1- Brill G. U.S. Army Research Laboratory, 20783, Adelphi, MD, USA aut NATIONALLICENCE 700 1- Chen Y. U.S. Army Research Laboratory, 20783, Adelphi, MD, USA aut NATIONALLICENCE 700 1- Salmon M. Evans Analytical Group, Inc., 27606, Raleigh, NC, USA aut NATIONALLICENCE 700 1- Zu J. Evans Analytical Group, Inc., 27606, Raleigh, NC, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3148-3155 0361-5235 42:11<3148 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer