naa a22 4500 510805205 CHVBK 20180411083413.0 cr unu---uuuuu 180411e20131101xx s 000 0 eng 10.1007/s11664-013-2650-8 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2650-8 Determination of Critical Thickness for Epitaxial ZnTe Layers Grown by Molecular Beam Epitaxy on (211)B and (100) GaSb Substrates [Elektronische Daten] [J. Chai, O. Noriega, A. Dedigama, J. Kim, A. Savage, K. Doyle, C. Smith, N. Chau, J. Pena, J. Dinan, D. Smith, T. Myers] Cross-section electron micrographs, cathodoluminescence images, and confocal photoluminescence (cPL) images have been acquired for ZnTe layers deposited to various thicknesses on GaSb substrates with (211)B and (100) orientations. The critical thickness of ZnTe on GaSb is predicted to range between 115nm and 329nm, depending on the theoretical approach chosen. For ZnTe layers grown on (211)B GaSb with thickness exceeding 150nm, dark spots and lines are present in all images. We associate these with dislocations generated at the ZnTe/GaSb interface. The discrepancy between this thickness value and a critical thickness value (350nm to 375nm) obtained for the (211)B orientation in a previous study is related to the distinction between the onset of misfit dislocations and the onset of significant plastic deformation. The former requires a direct imaging technique, as strain-related measurements such as x-ray diffraction do not have the resolution to detect the effects of small numbers of dislocations. For ZnTe layers on (100) GaSb, x-ray diffraction measurements indicate an abrupt change characteristic of dislocation multiplication at a thickness value in the range from 250nm to 275nm. High-resolution electron micrographs of the ZnTe/GaSb interface indicate that deoxidation using atomic hydrogen produces GaSb surfaces suitable for ZnTe epitaxy. cPL images of a 1.2-μm-thick lattice-matched ZnTe0.99Se 0.01 layer grown on a 150-nm-thick ZnTe buffer layer on a (211)B GaSb substrate yield a threading dislocation density of ∼7×104cm−2. TMS, 2013 ZnTe nationallicence GaSb nationallicence critical thickness nationallicence x-ray diffraction nationallicence transmission electron microscopy nationallicence confocal photoluminescence nationallicence Chai J. Material Science, Engineering, and Commercialization Program, Texas State University-San Marcos, 78666, San Marcos, TX, USA aut Noriega O. Physics Department, Texas State University-San Marcos, 78666, San Marcos, TX, USA aut Dedigama A. Material Science, Engineering, and Commercialization Program, Texas State University-San Marcos, 78666, San Marcos, TX, USA aut Kim J. Department of Physics, Arizona State University, 85287-1504, Tempe, AZ, USA aut Savage A. Material Science, Engineering, and Commercialization Program, Texas State University-San Marcos, 78666, San Marcos, TX, USA aut Doyle K. Material Science, Engineering, and Commercialization Program, Texas State University-San Marcos, 78666, San Marcos, TX, USA aut Smith C. Material Science, Engineering, and Commercialization Program, Texas State University-San Marcos, 78666, San Marcos, TX, USA aut Chau N. Material Science, Engineering, and Commercialization Program, Texas State University-San Marcos, 78666, San Marcos, TX, USA aut Pena J. Material Science, Engineering, and Commercialization Program, Texas State University-San Marcos, 78666, San Marcos, TX, USA aut Dinan J. Material Science, Engineering, and Commercialization Program, Texas State University-San Marcos, 78666, San Marcos, TX, USA aut Smith D. Department of Physics, Arizona State University, 85287-1504, Tempe, AZ, USA aut Myers T. Material Science, Engineering, and Commercialization Program, Texas State University-San Marcos, 78666, San Marcos, TX, USA aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3090-3096 0361-5235 42:11<3090 2013 42 11664 https://doi.org/10.1007/s11664-013-2650-8 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2650-8 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Chai J. Material Science, Engineering, and Commercialization Program, Texas State University-San Marcos, 78666, San Marcos, TX, USA aut NATIONALLICENCE 700 1- Noriega O. Physics Department, Texas State University-San Marcos, 78666, San Marcos, TX, USA aut NATIONALLICENCE 700 1- Dedigama A. Material Science, Engineering, and Commercialization Program, Texas State University-San Marcos, 78666, San Marcos, TX, USA aut NATIONALLICENCE 700 1- Kim J. Department of Physics, Arizona State University, 85287-1504, Tempe, AZ, USA aut NATIONALLICENCE 700 1- Savage A. Material Science, Engineering, and Commercialization Program, Texas State University-San Marcos, 78666, San Marcos, TX, USA aut NATIONALLICENCE 700 1- Doyle K. Material Science, Engineering, and Commercialization Program, Texas State University-San Marcos, 78666, San Marcos, TX, USA aut NATIONALLICENCE 700 1- Smith C. Material Science, Engineering, and Commercialization Program, Texas State University-San Marcos, 78666, San Marcos, TX, USA aut NATIONALLICENCE 700 1- Chau N. Material Science, Engineering, and Commercialization Program, Texas State University-San Marcos, 78666, San Marcos, TX, USA aut NATIONALLICENCE 700 1- Pena J. Material Science, Engineering, and Commercialization Program, Texas State University-San Marcos, 78666, San Marcos, TX, USA aut NATIONALLICENCE 700 1- Dinan J. Material Science, Engineering, and Commercialization Program, Texas State University-San Marcos, 78666, San Marcos, TX, USA aut NATIONALLICENCE 700 1- Smith D. Department of Physics, Arizona State University, 85287-1504, Tempe, AZ, USA aut NATIONALLICENCE 700 1- Myers T. Material Science, Engineering, and Commercialization Program, Texas State University-San Marcos, 78666, San Marcos, TX, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3090-3096 0361-5235 42:11<3090 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer