naa a22 4500 510805213 CHVBK 20180411083413.0 cr unu---uuuuu 180411e20131101xx s 000 0 eng 10.1007/s11664-013-2724-7 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2724-7 Quantum Dot Gate Three-State and Nonvolatile Memory Field-Effect Transistors Using a ZnS/ZnMgS/ZnS Heteroepitaxial Stack as a Tunnel Insulator on Silicon-on-Insulator Substrates [Elektronische Daten] [Ernesto Suarez, Pik-Yiu Chan, Murali Lingalugari, John Ayers, Evan Heller, Faquir Jain] This paper describes the use of II-VI lattice-matched gate insulators in quantum dot gate three-state and flash nonvolatile memory structures. Using silicon-on-insulator wafers we have fabricated GeO x -cladded Ge quantum dot (QD) floating gate nonvolatile memory field-effect transistor devices using ZnS-Zn0.95Mg0.05S-ZnS tunneling layers. The II-VI heteroepitaxial stack is nearly lattice-matched and is grown using metalorganic chemical vapor deposition on a silicon channel. This stack reduces the interface state density, improving threshold voltage variation, particularly in sub-22-nm devices. Simulations using self-consistent solutions of the Poisson and Schrödinger equations show the transfer of charge to the QD layers in three-state as well as nonvolatile memory cells. TMS, 2013 II-VI tunnel insulator nationallicence ZnS-ZnMgS nationallicence II-VI floating gate nationallicence SOI substrate nationallicence three state nationallicence nonvolatile memory nationallicence Suarez Ernesto Electrical and Computer Engineering Department, University of Connecticut, 371 Fairfield Road, 06269-2157, Storrs, CT, USA aut Chan Pik-Yiu Electrical and Computer Engineering Department, University of Connecticut, 371 Fairfield Road, 06269-2157, Storrs, CT, USA aut Lingalugari Murali Electrical and Computer Engineering Department, University of Connecticut, 371 Fairfield Road, 06269-2157, Storrs, CT, USA aut Ayers John Electrical and Computer Engineering Department, University of Connecticut, 371 Fairfield Road, 06269-2157, Storrs, CT, USA aut Heller Evan RSoft Design Group, Ossining, NY, USA aut Jain Faquir Electrical and Computer Engineering Department, University of Connecticut, 371 Fairfield Road, 06269-2157, Storrs, CT, USA aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3275-3282 0361-5235 42:11<3275 2013 42 11664 https://doi.org/10.1007/s11664-013-2724-7 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2724-7 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Suarez Ernesto Electrical and Computer Engineering Department, University of Connecticut, 371 Fairfield Road, 06269-2157, Storrs, CT, USA aut NATIONALLICENCE 700 1- Chan Pik-Yiu Electrical and Computer Engineering Department, University of Connecticut, 371 Fairfield Road, 06269-2157, Storrs, CT, USA aut NATIONALLICENCE 700 1- Lingalugari Murali Electrical and Computer Engineering Department, University of Connecticut, 371 Fairfield Road, 06269-2157, Storrs, CT, USA aut NATIONALLICENCE 700 1- Ayers John Electrical and Computer Engineering Department, University of Connecticut, 371 Fairfield Road, 06269-2157, Storrs, CT, USA aut NATIONALLICENCE 700 1- Heller Evan RSoft Design Group, Ossining, NY, USA aut NATIONALLICENCE 700 1- Jain Faquir Electrical and Computer Engineering Department, University of Connecticut, 371 Fairfield Road, 06269-2157, Storrs, CT, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3275-3282 0361-5235 42:11<3275 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer