naa a22 4500 510805264 CHVBK 20180411083413.0 cr unu---uuuuu 180411e20131101xx s 000 0 eng 10.1007/s11664-013-2649-1 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2649-1 Impact of Surface Treatment on the Structural and Electronic Properties of Polished CdZnTe Surfaces for Radiation Detectors [Elektronische Daten] [Suleyman Tari, F. Aqariden, Y. Chang, C. Grein, Jin Li, N. Kioussis] We present the effects of surface treatments on the structural and electronic properties of chemomechanically polished Cd0.9Zn0.1Te before contact deposition. Specifically, polished CdZnTe (CZT) samples were treated with four distinct chemical etchants: (1) bromine methanol (BM), (2) bromine in lactic acid, (3) bromine in methanol followed by bromine-20% lactic acid in ethylene glycol, and (4) hydrochloric acid (HCl). The surface structure and surface electronic properties were studied with atomic force microscopy (AFM) and x-ray photoelectron spectroscopy (XPS). AFM images showed that three of the four etchants significantly altered the surface morphology and structure of CZT. All etchants created smoother surfaces; however, all except HCl also introduced high densities of defects. HCl was found to not affect the surface structure. XPS measurements indicated that a thick, ∼3nm to 4nm, TeO2 layer formed about 1h after etching; hence, it is very important to process devices immediately after etching to prevent oxide formation. TMS, 2013 CdZnTe nationallicence radiation detector nationallicence etching nationallicence oxidation nationallicence surface nationallicence XPS nationallicence Tari Suleyman Sivananthan Laboratories, Inc., 590 Territorial Drive, Ste H, 60440, Bolingbrook, IL, USA aut Aqariden F. Sivananthan Laboratories, Inc., 590 Territorial Drive, Ste H, 60440, Bolingbrook, IL, USA aut Chang Y. Sivananthan Laboratories, Inc., 590 Territorial Drive, Ste H, 60440, Bolingbrook, IL, USA aut Grein C. Sivananthan Laboratories, Inc., 590 Territorial Drive, Ste H, 60440, Bolingbrook, IL, USA aut Li Jin W. M. Keck Computational Materials Theory Center, California State University at Northridge, 91330-8268, Northridge, CA, USA aut Kioussis N. W. M. Keck Computational Materials Theory Center, California State University at Northridge, 91330-8268, Northridge, CA, USA aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3252-3258 0361-5235 42:11<3252 2013 42 11664 https://doi.org/10.1007/s11664-013-2649-1 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2649-1 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Tari Suleyman Sivananthan Laboratories, Inc., 590 Territorial Drive, Ste H, 60440, Bolingbrook, IL, USA aut NATIONALLICENCE 700 1- Aqariden F. Sivananthan Laboratories, Inc., 590 Territorial Drive, Ste H, 60440, Bolingbrook, IL, USA aut NATIONALLICENCE 700 1- Chang Y. Sivananthan Laboratories, Inc., 590 Territorial Drive, Ste H, 60440, Bolingbrook, IL, USA aut NATIONALLICENCE 700 1- Grein C. Sivananthan Laboratories, Inc., 590 Territorial Drive, Ste H, 60440, Bolingbrook, IL, USA aut NATIONALLICENCE 700 1- Li Jin W. M. Keck Computational Materials Theory Center, California State University at Northridge, 91330-8268, Northridge, CA, USA aut NATIONALLICENCE 700 1- Kioussis N. W. M. Keck Computational Materials Theory Center, California State University at Northridge, 91330-8268, Northridge, CA, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3252-3258 0361-5235 42:11<3252 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer