naa a22 4500 510805272 CHVBK 20180411083414.0 cr unu---uuuuu 180411e20131101xx s 000 0 eng 10.1007/s11664-013-2712-y doi (NATIONALLICENCE)springer-10.1007/s11664-013-2712-y Investigation of Radiation Collection by InSb Infrared Focal-Plane Arrays with Micro-optic Structures [Elektronische Daten] [N. Guo, W. Hu, X. Chen, W. Lei, Y. Lv, X. Zhang, J. Si, W. Lu] Three designs of micro-optic structures have been analyzed by two-dimensional simulation. Compared with traditional spherical microlenses, the micro-optic structures have the same ability to collect radiation and do not have the disadvantages of traditional microlenses. In our analysis the micro-optic structures are simple grooved notches above the space between two adjacent mesas. We also investigate the characteristics of InSb focal-plane arrays with both spherical microlenses and micro-optic structures under oblique incident radiation. Empirical formulas were derived to describe the response and crosstalk as a function of incident radiation angle. Our results show that the micro-optic structures can be effectively used in radiation collection for InSb infrared focal-plane arrays. TMS, 2013 InSb infrared focal-plane arrays nationallicence microlens nationallicence micro-optic structure nationallicence response nationallicence crosstalk nationallicence Guo N. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut Hu W. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut Chen X. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut Lei W. School of Electrical, Electronic and Computer Engineering, University of Western Australia, 6009, Crawley, WA, Australia aut Lv Y. Luoyang Optoelectronic Institute, 471009, Luoyang, Henan, China aut Zhang X. Luoyang Optoelectronic Institute, 471009, Luoyang, Henan, China aut Si J. Luoyang Optoelectronic Institute, 471009, Luoyang, Henan, China aut Lu W. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3181-3185 0361-5235 42:11<3181 2013 42 11664 https://doi.org/10.1007/s11664-013-2712-y text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2712-y text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Guo N. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut NATIONALLICENCE 700 1- Hu W. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut NATIONALLICENCE 700 1- Chen X. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut NATIONALLICENCE 700 1- Lei W. School of Electrical, Electronic and Computer Engineering, University of Western Australia, 6009, Crawley, WA, Australia aut NATIONALLICENCE 700 1- Lv Y. Luoyang Optoelectronic Institute, 471009, Luoyang, Henan, China aut NATIONALLICENCE 700 1- Zhang X. Luoyang Optoelectronic Institute, 471009, Luoyang, Henan, China aut NATIONALLICENCE 700 1- Si J. Luoyang Optoelectronic Institute, 471009, Luoyang, Henan, China aut NATIONALLICENCE 700 1- Lu W. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3181-3185 0361-5235 42:11<3181 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer