naa a22 4500 510805280 CHVBK 20180411083414.0 cr unu---uuuuu 180411e20131101xx s 000 0 eng 10.1007/s11664-013-2758-x doi (NATIONALLICENCE)springer-10.1007/s11664-013-2758-x Four-State Sub-12-nm FETs Employing Lattice-Matched II-VI Barrier Layers [Elektronische Daten] [F. Jain, P.-Y. Chan, E. Suarez, M. Lingalugari, J. Kondo, P. Gogna, B. Miller, J. Chandy, E. Heller] Three-state behavior has been demonstrated in Si and InGaAs field-effect transistors (FETs) when two layers of cladded quantum dots (QDs), such as SiO x -cladded Si or GeO x -cladded Ge, are assembled on the thin tunnel gate insulator. This paper describes FET structures that have the potential to exhibit four states. These structures include: (1) quantum dot gate (QDG) FETs with dissimilar dot layers, (2) quantum dot channel (QDC) with and without QDG layers, (3) spatial wavefunction switched (SWS) FETs with multiple coupled quantum well channels, and (4) hybrid SWS-QDC structures having multiple drains/sources. Four-state FETs enable compact low-power novel multivalued logic and two-bit memory architectures. Furthermore, we show that the performance of these FETs can be enhanced by the incorporation of II-VI nearly lattice-matched layers in place of gate oxides and quantum well/dot barriers or claddings. Lattice-matched high-energy gap layers cause reduction in interface state density and control of threshold voltage variability, while providing a higher dielectric constant than SiO2. Simulations involving self-consistent solutions of the Poisson and Schrödinger equations, and transfer probability rate from channel (well or dot layer) to gate (QD layer) are used to design sub-12-nm FETs, which will aid the design of multibit logic and memory cells. TMS, 2013 Multistate FETs nationallicence four-state QDG FETs nationallicence four-state QDSL FETs nationallicence four-channel SWS FETs nationallicence multiple quantum well/dot channel FETs nationallicence Jain F. ECE Department, University of Connecticut, 06269, Storrs, CT, USA aut Chan P.-Y ECE Department, University of Connecticut, 06269, Storrs, CT, USA aut Suarez E. ECE Department, University of Connecticut, 06269, Storrs, CT, USA aut Lingalugari M. ECE Department, University of Connecticut, 06269, Storrs, CT, USA aut Kondo J. ECE Department, University of Connecticut, 06269, Storrs, CT, USA aut Gogna P. ECE Department, University of Connecticut, 06269, Storrs, CT, USA aut Miller B. ECE Department, University of Connecticut, 06269, Storrs, CT, USA aut Chandy J. ECE Department, University of Connecticut, 06269, Storrs, CT, USA aut Heller E. Synopsys, 10562, Ossining, NY, USA aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3191-3202 0361-5235 42:11<3191 2013 42 11664 https://doi.org/10.1007/s11664-013-2758-x text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2758-x text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Jain F. ECE Department, University of Connecticut, 06269, Storrs, CT, USA aut NATIONALLICENCE 700 1- Chan P.-Y ECE Department, University of Connecticut, 06269, Storrs, CT, USA aut NATIONALLICENCE 700 1- Suarez E. ECE Department, University of Connecticut, 06269, Storrs, CT, USA aut NATIONALLICENCE 700 1- Lingalugari M. ECE Department, University of Connecticut, 06269, Storrs, CT, USA aut NATIONALLICENCE 700 1- Kondo J. ECE Department, University of Connecticut, 06269, Storrs, CT, USA aut NATIONALLICENCE 700 1- Gogna P. ECE Department, University of Connecticut, 06269, Storrs, CT, USA aut NATIONALLICENCE 700 1- Miller B. ECE Department, University of Connecticut, 06269, Storrs, CT, USA aut NATIONALLICENCE 700 1- Chandy J. ECE Department, University of Connecticut, 06269, Storrs, CT, USA aut NATIONALLICENCE 700 1- Heller E. Synopsys, 10562, Ossining, NY, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3191-3202 0361-5235 42:11<3191 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer