naa a22 4500 510805302 CHVBK 20180411083414.0 cr unu---uuuuu 180411e20131101xx s 000 0 eng 10.1007/s11664-013-2733-6 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2733-6 Modeling of Dark Current in HgCdTe Infrared Detectors [Elektronische Daten] [A. Ferron, J. Rothman, O. Gravrand] This paper presents modeling work carried out using a finite-element modeling approach. The physical models implemented for HgCdTe infrared photodetectors are reviewed. In particular, generation-recombination models such as Shockley-Read-Hall through a trap level in a narrow bandgap and Auger recombination are included. These well-established models are described using widely published analytical expressions. This paper highlights both the unique set of trap parameters found to fit the dark current as a function of temperature and composition for mercury-vacancy p-type-doped photodiodes and their use in a finite-element code. An equivalent set of trap parameters is also proposed for indium n-type-doped material in a p-on-n photodiode simulated in three dimensions. Device simulations also include the impact ionization process to fine-tune the saturation dark current. Finally, excess dark current is also modeled with the help of nonlocal band-to-band tunneling, which requires no fitting parameters. TMS, 2013 Infrared detector nationallicence HgCdTe nationallicence dark current nationallicence carrier lifetime nationallicence modeling nationallicence numerical simulation nationallicence Ferron A. CEA Grenoble, LETI, Minatec Campus, 17 Rue des Martyrs, 38054, Grenoble Cedex 9, France aut Rothman J. CEA Grenoble, LETI, Minatec Campus, 17 Rue des Martyrs, 38054, Grenoble Cedex 9, France aut Gravrand O. CEA Grenoble, LETI, Minatec Campus, 17 Rue des Martyrs, 38054, Grenoble Cedex 9, France aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3303-3308 0361-5235 42:11<3303 2013 42 11664 https://doi.org/10.1007/s11664-013-2733-6 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2733-6 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Ferron A. CEA Grenoble, LETI, Minatec Campus, 17 Rue des Martyrs, 38054, Grenoble Cedex 9, France aut NATIONALLICENCE 700 1- Rothman J. CEA Grenoble, LETI, Minatec Campus, 17 Rue des Martyrs, 38054, Grenoble Cedex 9, France aut NATIONALLICENCE 700 1- Gravrand O. CEA Grenoble, LETI, Minatec Campus, 17 Rue des Martyrs, 38054, Grenoble Cedex 9, France aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3303-3308 0361-5235 42:11<3303 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer