caa a22 4500 510805329 CHVBK 20190416140728.0 cr unu---uuuuu 180411e20131101xx s 000 0 eng 10.1007/s11664-013-2685-x doi (NATIONALLICENCE)springer-10.1007/s11664-013-2685-x Numerical Simulation and Analytical Modeling of InAs nBn Infrared Detectors with p -Type Barriers [Elektronische Daten] [Marion Reine, Jonathan Schuster, Benjamin Pinkie, Enrico Bellotti] This paper presents finite-element one-dimensional numerical simulations and analytical modeling for ideal (diffusion current only) nBn detectors with p-type barrier layers. The simulations show that the current-voltage J(V) and the dynamic resistance versus voltage R D(V) relations, both dark and illuminated, are in excellent agreement with the equations for ideal back-to-back photodiodes. We present a depletion approximation model for the nBn detector, analogous to that for the conventional p-n junction photodiode, based on new boundary conditions on the hole concentrations versus voltage at the edges of the nBn barrier layer. We show that these nBn boundary conditions are identical to those for ideal back-to-back photodiodes, justifying the applicability of back-to-back photodiode equations to describe the ideal nBn detector. The simulations for the space-charge regions show a low-bias-voltage regime and a high-bias-voltage regime. The integrated space-charge densities in the layers adjacent to the barrier layer vary linearly with bias voltage. Negative dynamic resistance occurs because the bias voltage changes the effective thickness of the thin-base layers that generate diffusion current. We present a new formulation of the model for ideal back-to-back photodiodes with a more elegant and transparent set of equations for J(V) and R D(V). TMS, 2013 InAs nationallicence nBn nationallicence infrared detector nationallicence back-to-back photodiodes nationallicence photodiode nationallicence numerical simulation nationallicence Reine Marion 02138, Cambridge, MA, USA aut Schuster Jonathan Department of Electrical and Computer Engineering, Boston University, 02215, Boston, MA, USA aut Pinkie Benjamin Department of Electrical and Computer Engineering, Boston University, 02215, Boston, MA, USA aut Bellotti Enrico Department of Electrical and Computer Engineering, Boston University, 02215, Boston, MA, USA aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3015-3033 0361-5235 42:11<3015 2013 42 11664 https://doi.org/10.1007/s11664-013-2685-x text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2685-x text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Reine Marion 02138, Cambridge, MA, USA aut NATIONALLICENCE 700 1- Schuster Jonathan Department of Electrical and Computer Engineering, Boston University, 02215, Boston, MA, USA aut NATIONALLICENCE 700 1- Pinkie Benjamin Department of Electrical and Computer Engineering, Boston University, 02215, Boston, MA, USA aut NATIONALLICENCE 700 1- Bellotti Enrico Department of Electrical and Computer Engineering, Boston University, 02215, Boston, MA, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3015-3033 0361-5235 42:11<3015 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence SWISSBIB 510805329 BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer