naa a22 4500 510805337 CHVBK 20180411083414.0 cr unu---uuuuu 180411e20131101xx s 000 0 eng 10.1007/s11664-013-2659-z doi (NATIONALLICENCE)springer-10.1007/s11664-013-2659-z Depth Profiling of Electronic Transport Parameters in n -on- p Boron-Ion-Implanted Vacancy-Doped HgCdTe [Elektronische Daten] [G. Umana-Membreno, H. Kala, J. Antoszewski, Z. Ye, W. Hu, R. Ding, X. Chen, W. Lu, L. He, J. Dell, L. Faraone] We report results of a detailed study of electronic transport in n-on-p junctions formed by 150-keV boron-ion implantation in vacancy-doped p-type Hg0.769Cd0.231Te without postimplantation thermal annealing. A mobility spectrum analysis methodology in conjunction with a wet chemical etching-based surface removal approach has been employed to depth profile the transport characteristics of the samples. In the as-implanted samples, three distinct electron species were detected which are shown to be associated with (a) low-mobility electrons in the top 220-nm surface-damaged layer (E 1:μ 80K=2940cm2/Vs), (b) the B-ion implantation region in the top 500-nm region (E 2:μ 80K=7490cm2/Vs), and (c) high-mobility electrons in the n-to-p transition region at a depth of 600nm to 700nm (E 3:μ 80K=25,640cm2/Vs). Due to the maximum magnetic field employed (2T), hole carriers from the underlying vacancy-doped p-type region were detected only after the removal of the top 220nm of the profiled sample (μ 80K=126cm2/Vs), revealing fully p-type character 800nm below the original sample surface. A comparison of the extracted E 2 electron concentration and calculated B-impurity profile suggests that the n-type region is due primarily to near-surface implantation-induced lattice damage. TMS, 2013 HgCdTe nationallicence mobility spectrum analysis nationallicence electronic transport nationallicence multiple carrier transport nationallicence ion implantation nationallicence Umana-Membreno G. School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 6009, Crawley, WA, Australia aut Kala H. School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 6009, Crawley, WA, Australia aut Antoszewski J. School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 6009, Crawley, WA, Australia aut Ye Z. Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut Hu W. Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut Ding R. Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut Chen X. Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut Lu W. Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut He L. Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut Dell J. School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 6009, Crawley, WA, Australia aut Faraone L. School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 6009, Crawley, WA, Australia aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3108-3113 0361-5235 42:11<3108 2013 42 11664 https://doi.org/10.1007/s11664-013-2659-z text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2659-z text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Umana-Membreno G. School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 6009, Crawley, WA, Australia aut NATIONALLICENCE 700 1- Kala H. School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 6009, Crawley, WA, Australia aut NATIONALLICENCE 700 1- Antoszewski J. School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 6009, Crawley, WA, Australia aut NATIONALLICENCE 700 1- Ye Z. Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut NATIONALLICENCE 700 1- Hu W. Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut NATIONALLICENCE 700 1- Ding R. Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut NATIONALLICENCE 700 1- Chen X. Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut NATIONALLICENCE 700 1- Lu W. Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut NATIONALLICENCE 700 1- He L. Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut NATIONALLICENCE 700 1- Dell J. School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 6009, Crawley, WA, Australia aut NATIONALLICENCE 700 1- Faraone L. School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 6009, Crawley, WA, Australia aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3108-3113 0361-5235 42:11<3108 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer