naa a22 4500 510805345 CHVBK 20180411083414.0 cr unu---uuuuu 180411e20131101xx s 000 0 eng 10.1007/s11664-013-2780-z doi (NATIONALLICENCE)springer-10.1007/s11664-013-2780-z Impurity Gettering in (112)B HgCdTe/CdTe/Alternate Substrates [Elektronische Daten] [J. Benson, L. Bubulac, C. Lennon, R. Jacobs, P. Smith, J. Markunas, M. Jaime-Vasquez, L. Almeida, A. Stoltz, J. Arias, G. Brill, Y. Chen, P. Wijewarnasuriya, M. Vilela, J. Peterson, S. Johnson, D. Lofgreen, D. Rhiger, E. Patten, J. Bangs] The crystalline structure and impurity profiles of HgCdTe/CdTe/alternate substrate (AS; Si and GaAs are possibilities) and CdTe/AS were analyzed by secondary-ion mass spectrometry, atomic force microscopy, etch pit density analysis, and scanning transmission electron microscopy. Impurities (Li, Na, and K) were shown to getter in as-grown CdTe/Si epilayers at in situ Te-stabilized thermal anneal (~500°C) interfaces. In HgCdTe/CdTe/Si epilayers, indium accumulation was observed at Te-stabilized thermal anneal interfaces. Impurity accumulation was measured at HgCdTe/CdTe and CdTe/ZnTe interfaces. Processing anneals were found to nearly eliminate the gettering effect at the in situ Te-stabilized thermal anneal interfaces. Impurities were found to redistribute to the front HgCdTe/CdTe/Si surface and p-n junction interfaces during annealing steps. We also investigated altering the in situ Te-stabilized thermal anneal process to enhance the gettering effect. TMS (outside the USA), 2013 HgCdTe/CdTe/alternate substrate nationallicence molecular beam epitaxy nationallicence dislocations nationallicence in situ Te-stabilized thermal cyclic annealing nationallicence etch pit density nationallicence SIMS nationallicence Benson J. U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA aut Bubulac L. U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA aut Lennon C. U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA aut Jacobs R. U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA aut Smith P. U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA aut Markunas J. U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA aut Jaime-Vasquez M. U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA aut Almeida L. U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA aut Stoltz A. U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA aut Arias J. U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA aut Brill G. U.S. Army Research Laboratory, Adelphi, MD, USA aut Chen Y. U.S. Army Research Laboratory, Adelphi, MD, USA aut Wijewarnasuriya P. U.S. Army Research Laboratory, Adelphi, MD, USA aut Vilela M. Raytheon Vision Systems, Goleta, CA, USA aut Peterson J. Raytheon Vision Systems, Goleta, CA, USA aut Johnson S. Raytheon Vision Systems, Goleta, CA, USA aut Lofgreen D. Raytheon Vision Systems, Goleta, CA, USA aut Rhiger D. Raytheon Vision Systems, Goleta, CA, USA aut Patten E. Raytheon Vision Systems, Goleta, CA, USA aut Bangs J. Raytheon Vision Systems, Goleta, CA, USA aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3217-3223 0361-5235 42:11<3217 2013 42 11664 https://doi.org/10.1007/s11664-013-2780-z text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2780-z text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Benson J. U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA aut NATIONALLICENCE 700 1- Bubulac L. U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA aut NATIONALLICENCE 700 1- Lennon C. U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA aut NATIONALLICENCE 700 1- Jacobs R. U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA aut NATIONALLICENCE 700 1- Smith P. U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA aut NATIONALLICENCE 700 1- Markunas J. U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA aut NATIONALLICENCE 700 1- Jaime-Vasquez M. U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA aut NATIONALLICENCE 700 1- Almeida L. U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA aut NATIONALLICENCE 700 1- Stoltz A. U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA aut NATIONALLICENCE 700 1- Arias J. U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA aut NATIONALLICENCE 700 1- Brill G. U.S. Army Research Laboratory, Adelphi, MD, USA aut NATIONALLICENCE 700 1- Chen Y. U.S. Army Research Laboratory, Adelphi, MD, USA aut NATIONALLICENCE 700 1- Wijewarnasuriya P. U.S. Army Research Laboratory, Adelphi, MD, USA aut NATIONALLICENCE 700 1- Vilela M. Raytheon Vision Systems, Goleta, CA, USA aut NATIONALLICENCE 700 1- Peterson J. Raytheon Vision Systems, Goleta, CA, USA aut NATIONALLICENCE 700 1- Johnson S. Raytheon Vision Systems, Goleta, CA, USA aut NATIONALLICENCE 700 1- Lofgreen D. Raytheon Vision Systems, Goleta, CA, USA aut NATIONALLICENCE 700 1- Rhiger D. Raytheon Vision Systems, Goleta, CA, USA aut NATIONALLICENCE 700 1- Patten E. Raytheon Vision Systems, Goleta, CA, USA aut NATIONALLICENCE 700 1- Bangs J. Raytheon Vision Systems, Goleta, CA, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3217-3223 0361-5235 42:11<3217 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer