naa a22 4500 510805361 CHVBK 20180411083415.0 cr unu---uuuuu 180411e20131101xx s 000 0 eng 10.1007/s11664-013-2696-7 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2696-7 Novel Multistate Quantum Dot Gate FETs Using SiO2 and Lattice-Matched ZnS-ZnMgS-ZnS as Gate Insulators [Elektronische Daten] [M. Lingalugari, K. Baskar, P.-Y. Chan, P. Dufilie, E. Suarez, J. Chandy, E. Heller, F. Jain] Multistate behavior has been achieved in quantum dot gate field-effect transistor (QDGFET) configurations using either SiO x -cladded Si or GeO x -cladded Ge quantum dots (QDs) with asymmetric dot sizes. An alternative method is to use both SiO x -cladded Si and GeO x -cladded Ge QDs in QDGFETs. In this paper, we present experimental verification of four-state behavior observed in a QDGFET with cladded Si and Ge dots site-specifically self-assembled in the gate region over a thin SiO2 tunnel layer on a Si substrate. This paper also investigates the use of lattice-matched high-κ ZnS-ZnMgS-ZnS layers as a gate insulator in mixed-dot Si QDGFETs. Quantum-mechanical simulation of the transfer characteristic (I D-V G) shows four-state behavior with two intermediate states between the conventional ON and OFF states. TMS, 2013 Quantum dot gate FETs nationallicence II-VI barrier layers nationallicence high- κ dielectric layers nationallicence lattice-matched gate insulators nationallicence multistate FETs nationallicence Lingalugari M. Electrical and Computer Engineering, University of Connecticut, 06269, Storrs, CT, USA aut Baskar K. Electrical and Computer Engineering, University of Connecticut, 06269, Storrs, CT, USA aut Chan P.-Y Electrical and Computer Engineering, University of Connecticut, 06269, Storrs, CT, USA aut Dufilie P. Electrical and Computer Engineering, University of Connecticut, 06269, Storrs, CT, USA aut Suarez E. Electrical and Computer Engineering, University of Connecticut, 06269, Storrs, CT, USA aut Chandy J. Electrical and Computer Engineering, University of Connecticut, 06269, Storrs, CT, USA aut Heller E. Synopsys Inc., 10562, Ossining, NY, USA aut Jain F. Electrical and Computer Engineering, University of Connecticut, 06269, Storrs, CT, USA aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3156-3163 0361-5235 42:11<3156 2013 42 11664 https://doi.org/10.1007/s11664-013-2696-7 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2696-7 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Lingalugari M. Electrical and Computer Engineering, University of Connecticut, 06269, Storrs, CT, USA aut NATIONALLICENCE 700 1- Baskar K. Electrical and Computer Engineering, University of Connecticut, 06269, Storrs, CT, USA aut NATIONALLICENCE 700 1- Chan P.-Y Electrical and Computer Engineering, University of Connecticut, 06269, Storrs, CT, USA aut NATIONALLICENCE 700 1- Dufilie P. Electrical and Computer Engineering, University of Connecticut, 06269, Storrs, CT, USA aut NATIONALLICENCE 700 1- Suarez E. Electrical and Computer Engineering, University of Connecticut, 06269, Storrs, CT, USA aut NATIONALLICENCE 700 1- Chandy J. Electrical and Computer Engineering, University of Connecticut, 06269, Storrs, CT, USA aut NATIONALLICENCE 700 1- Heller E. Synopsys Inc., 10562, Ossining, NY, USA aut NATIONALLICENCE 700 1- Jain F. Electrical and Computer Engineering, University of Connecticut, 06269, Storrs, CT, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3156-3163 0361-5235 42:11<3156 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer