naa a22 4500 510805396 CHVBK 20180411083415.0 cr unu---uuuuu 180411e20131101xx s 000 0 eng 10.1007/s11664-013-2818-2 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2818-2 A Novel Metal-Rich Anneal for In Vacuo Passivation of High-Aspect-Ratio Mercury Cadmium Telluride Surfaces [Elektronische Daten] [Chang-Feng Wan, Thomas Orent, Thomas Myers, Ishwara Bhat, Andy Stoltz, Joe Pellegrino] A new method for Cd-rich annealing of mercury cadmium telluride (MCT) was developed based on the observation that the deposition of Cd onto MCT by vacuum evaporation became self-limiting whenever the substrate temperature was above 70°C regardless of the Cd evaporation rate. Preliminary results indicated that this new method may be suitable for passivation of high-aspect-ratio MCT surfaces, for passivation at low temperatures, for invacuo operation, and/or for vacancy annihilation in MCT. Furthermore, the process can be carried out in the conventional open-tube reactors used for molecular beam epitaxy, metalorganic chemical vapor deposition, and physical vapor deposition. TMS, 2013 Passivation nationallicence HgCdTe nationallicence infrared FPA nationallicence photodiode nationallicence Cd-rich anneal nationallicence high aspect ratio nationallicence Wan Chang-Feng VISM Corporation, Dallas, TX, USA aut Orent Thomas VISM Corporation, Dallas, TX, USA aut Myers Thomas Texas State University at San Marcos, San Marcos, TX, USA aut Bhat Ishwara Rensselaer Polytechnic Institute, Troy, NY, USA aut Stoltz Andy U.S. Army, RDECOM, CERDEC, NVESD, Fort Belvoir, VA, USA aut Pellegrino Joe U.S. Army, RDECOM, CERDEC, NVESD, Fort Belvoir, VA, USA aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3359-3366 0361-5235 42:11<3359 2013 42 11664 https://doi.org/10.1007/s11664-013-2818-2 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2818-2 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Wan Chang-Feng VISM Corporation, Dallas, TX, USA aut NATIONALLICENCE 700 1- Orent Thomas VISM Corporation, Dallas, TX, USA aut NATIONALLICENCE 700 1- Myers Thomas Texas State University at San Marcos, San Marcos, TX, USA aut NATIONALLICENCE 700 1- Bhat Ishwara Rensselaer Polytechnic Institute, Troy, NY, USA aut NATIONALLICENCE 700 1- Stoltz Andy U.S. Army, RDECOM, CERDEC, NVESD, Fort Belvoir, VA, USA aut NATIONALLICENCE 700 1- Pellegrino Joe U.S. Army, RDECOM, CERDEC, NVESD, Fort Belvoir, VA, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3359-3366 0361-5235 42:11<3359 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer