naa a22 4500 51080540X CHVBK 20180411083415.0 cr unu---uuuuu 180411e20131101xx s 000 0 eng 10.1007/s11664-013-2636-6 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2636-6 1/ f Noise in HgCdTe Focal-Plane Arrays [Elektronische Daten] [M.A. Kinch, R.L. Strong, C.A. Schaake] Characterization of mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) HgCdTe focal-plane arrays (FPAs) indicates that limitations on operability at elevated temperatures are due to detector dark current and excess 1/f noise. Dark-current models in HgCdTe are well established and understood; however, the same cannot be said for 1/f noise. In this paper we propose two models for separate sources of 1/f noise in HgCdTe photodiodes based upon charge fluctuations out of McWhorter-like surface traps. The two 1/f noise components are designated as (1) systemic, being associated with passivated external surfaces of the diodes, and (2) isolated defect, being, it is proposed, associated with the internal surfaces of built-in physical defects such as dislocations. The models are utilized to explain data measured on LWIR and MWIR test-diode structures, and predictions are made regarding the performance of MWIR and LWIR FPAs at elevated temperatures. TMS, 2013 HgCdTe nationallicence 1/ f noise nationallicence infrared nationallicence diodes nationallicence focal-plane arrays nationallicence Kinch M.A. DRS ITS, Dallas, TX, USA aut Strong R.L. DRS ITS, Dallas, TX, USA aut Schaake C.A. DRS ITS, Dallas, TX, USA aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3243-3251 0361-5235 42:11<3243 2013 42 11664 https://doi.org/10.1007/s11664-013-2636-6 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2636-6 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Kinch M.A. DRS ITS, Dallas, TX, USA aut NATIONALLICENCE 700 1- Strong R.L. DRS ITS, Dallas, TX, USA aut NATIONALLICENCE 700 1- Schaake C.A. DRS ITS, Dallas, TX, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3243-3251 0361-5235 42:11<3243 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer