naa a22 4500 510805418 CHVBK 20180411083415.0 cr unu---uuuuu 180411e20131101xx s 000 0 eng 10.1007/s11664-013-2803-9 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2803-9 Issues in HgCdTe Research and Expected Progress in Infrared Detector Fabrication [Elektronische Daten] [O. Gravrand, G. Destefanis, S. Bisotto, N. Baier, J. Rothman, L. Mollard, D. Brellier, L. Rubaldo, A. Kerlain, V. Destefanis, M. Vuillermet] The purpose of this paper is to review the trends in HgCdTe research, illustrating the discussed ideas with the latest results obtained at DEFIR (CEA-LETI and Sofradir joint laboratory). The beginning of this paper is devoted to an extended introduction to today's issues concerning HgCdTe photodiode performance enhancement. In fact, very high-quality material is mandatory for ultrahigh performance at low temperature as well as for high noise operability at high operating temperature (HOT). Therefore, a strong effort has been carried out during the last few years for lattice-matched CdZnTe substrate and HgCdTe active layer growth improvement, leading to very large substrates and ultraflat liquid-phase epitaxy layers. The same analysis holds for diode process quality and passivation. Therefore, the photodiode process has been completely revisited in order to optimize HOT operability. Also necessary for the next generation of HOT devices, some significant progress has been made in small-pixel-pitch interconnection on silicon read-out circuits. Indeed, the first 10-μm focal-plane arrays (FPAs) have been successfully fabricated this year in the mid-wave infrared (IR) band. The latest avalanche photodiode (APD) realizations are also presented with 15-μm-pitch FPAs for passive imaging and 30-μm-pitch ultrafast arrays running at 1.5kHz full frame rate. Linear-mode photon counting using APDs is also briefly discussed. Finally, the paper concludes on more complex structures for the third generation of IR detectors, discussing the latest achievements in dual-band FPA fabrication in various spectral bands. TMS, 2013 HgCdTe nationallicence CdZnTe nationallicence HOT nationallicence SWAP nationallicence 10 μ m pitch nationallicence APD nationallicence dual band nationallicence Gravrand O. CEA-LETI-Minatec, Grenoble, France aut Destefanis G. CEA-LETI-Minatec, Grenoble, France aut Bisotto S. CEA-LETI-Minatec, Grenoble, France aut Baier N. CEA-LETI-Minatec, Grenoble, France aut Rothman J. CEA-LETI-Minatec, Grenoble, France aut Mollard L. CEA-LETI-Minatec, Grenoble, France aut Brellier D. CEA-LETI-Minatec, Grenoble, France aut Rubaldo L. Sofradir, Veurey-Voroize, France aut Kerlain A. Sofradir, Veurey-Voroize, France aut Destefanis V. Sofradir, Veurey-Voroize, France aut Vuillermet M. Sofradir, Veurey-Voroize, France aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3349-3358 0361-5235 42:11<3349 2013 42 11664 https://doi.org/10.1007/s11664-013-2803-9 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2803-9 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Gravrand O. CEA-LETI-Minatec, Grenoble, France aut NATIONALLICENCE 700 1- Destefanis G. CEA-LETI-Minatec, Grenoble, France aut NATIONALLICENCE 700 1- Bisotto S. CEA-LETI-Minatec, Grenoble, France aut NATIONALLICENCE 700 1- Baier N. CEA-LETI-Minatec, Grenoble, France aut NATIONALLICENCE 700 1- Rothman J. CEA-LETI-Minatec, Grenoble, France aut NATIONALLICENCE 700 1- Mollard L. CEA-LETI-Minatec, Grenoble, France aut NATIONALLICENCE 700 1- Brellier D. CEA-LETI-Minatec, Grenoble, France aut NATIONALLICENCE 700 1- Rubaldo L. Sofradir, Veurey-Voroize, France aut NATIONALLICENCE 700 1- Kerlain A. Sofradir, Veurey-Voroize, France aut NATIONALLICENCE 700 1- Destefanis V. Sofradir, Veurey-Voroize, France aut NATIONALLICENCE 700 1- Vuillermet M. Sofradir, Veurey-Voroize, France aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3349-3358 0361-5235 42:11<3349 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer