naa a22 4500 510805426 CHVBK 20180411083415.0 cr unu---uuuuu 180411e20131101xx s 000 0 eng 10.1007/s11664-013-2683-z doi (NATIONALLICENCE)springer-10.1007/s11664-013-2683-z Low-Temperature Photoluminescence Study of CdTe:In Crystals Annealed in Molten Bismuth [Elektronische Daten] [G. Yang, A. Bolotnikov, Y. Cui, G. Camarda, A. Hossain, K. Kim, J. Franc, E. Belas, R. James] We used a low-temperature photoluminescence (PL) technique to investigate CdTe:In crystals after annealing in molten bismuth (Bi). The two annealed samples showed different resistivities after the treatment. For both samples, we observed very strong emissions in the excitonic spectral region and revealed fine structures of exciton emissions in the PL spectrum. In the sample with high resistivity, we found one ionized donor-bound exciton peak, (D+,X), that we ascribed to incorporated Bi atoms occupying Cd sites in the CdTe. The temperature dependence of the (D+,X) peak emission had an associated activation energy of 3.59meV for the exciton bound to this ionized donor. Meanwhile, a donor-acceptor pair peak at 1.5315eV, which was absent from the PL of the low-resistivity sample, suggested the likelihood of some Bi atoms occupying Te sites in the high-resistivity sample. Our findings highlight the need for detailed investigation of annealing conditions to ensure precise control of the electrical properties of the material during annealing in molten Bi. TMS (outside the USA), 2013 CdTe nationallicence postgrowth annealing nationallicence bismuth nationallicence photoluminescence nationallicence Yang G. Brookhaven National Laboratory, Bldg. 197D, 11973, Upton, NY, USA aut Bolotnikov A. Brookhaven National Laboratory, Bldg. 197D, 11973, Upton, NY, USA aut Cui Y. Brookhaven National Laboratory, Bldg. 197D, 11973, Upton, NY, USA aut Camarda G. Brookhaven National Laboratory, Bldg. 197D, 11973, Upton, NY, USA aut Hossain A. Brookhaven National Laboratory, Bldg. 197D, 11973, Upton, NY, USA aut Kim K. Brookhaven National Laboratory, Bldg. 197D, 11973, Upton, NY, USA aut Franc J. Institute of Physics, Charles University, 121 16, Prague, Czech Republic aut Belas E. Institute of Physics, Charles University, 121 16, Prague, Czech Republic aut James R. Brookhaven National Laboratory, Bldg. 197D, 11973, Upton, NY, USA aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3138-3141 0361-5235 42:11<3138 2013 42 11664 https://doi.org/10.1007/s11664-013-2683-z text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2683-z text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Yang G. Brookhaven National Laboratory, Bldg. 197D, 11973, Upton, NY, USA aut NATIONALLICENCE 700 1- Bolotnikov A. Brookhaven National Laboratory, Bldg. 197D, 11973, Upton, NY, USA aut NATIONALLICENCE 700 1- Cui Y. Brookhaven National Laboratory, Bldg. 197D, 11973, Upton, NY, USA aut NATIONALLICENCE 700 1- Camarda G. Brookhaven National Laboratory, Bldg. 197D, 11973, Upton, NY, USA aut NATIONALLICENCE 700 1- Hossain A. Brookhaven National Laboratory, Bldg. 197D, 11973, Upton, NY, USA aut NATIONALLICENCE 700 1- Kim K. Brookhaven National Laboratory, Bldg. 197D, 11973, Upton, NY, USA aut NATIONALLICENCE 700 1- Franc J. Institute of Physics, Charles University, 121 16, Prague, Czech Republic aut NATIONALLICENCE 700 1- Belas E. Institute of Physics, Charles University, 121 16, Prague, Czech Republic aut NATIONALLICENCE 700 1- James R. Brookhaven National Laboratory, Bldg. 197D, 11973, Upton, NY, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3138-3141 0361-5235 42:11<3138 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer