naa a22 4500 510805434 CHVBK 20180411083415.0 cr unu---uuuuu 180411e20131101xx s 000 0 eng 10.1007/s11664-013-2726-5 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2726-5 Applications of the Infrared Measurement Analyzer: Hydrogenated LWIR HgCdTe Detectors [Elektronische Daten] [Christopher Buurma, Paul Boieriu, Ramana Bommena, Sivalingam Sivananthan] Low-cost silicon-based alternative substrates are an attractive choice for next-generation large-area high-resolution multicolor infrared (IR) detector arrays. However, the high density of dislocations formed during molecular-beam epitaxy growth of HgCdTe/CdTe/Si limits the performance of IR arrays, especially in the long-wavelength infrared (LWIR) region. Atomic hydrogen introduced by inductively coupled plasma (ICP) into HgCdTe is expected to passivate dislocations, bulk and surface defects, removing their contributions to dark current. Passivation using ICP hydrogenation can have different effects on HgCdTe photodiode performance, depending on which class of defects is being passivated. The infrared measurement analyzer (IRMA) was used to deconvolute the effects of hydrogenation on LWIR HgCdTe photodiodes through a reverse-modeling fit of the current-voltage (I-V) characteristic. This approach results in a fit with fewer false minima, low parameter error and bias, and high confidence in extracted device parameters. A description of this tool and its application to hydrogenated HgCdTe LWIR detectors is presented. Lower dark currents have been observed after hydrogenation of fully fabricated devices. Model-fits performed on a wide variety of LWIR HgCdTe photodiodes suggest that hydrogenation provides both surface and bulk quality improvements. These benefits of ICP hydrogenation have been retained over several months. TMS, 2013 II-VI nationallicence simulation nationallicence modeling nationallicence LWIR nationallicence hydrogenation nationallicence HgCdTe nationallicence Buurma Christopher Microphysics Laboratory, University of Illinois at Chicago, Chicago, IL, USA aut Boieriu Paul EPIR Technologies, Bolingbrook, IL, USA aut Bommena Ramana EPIR Technologies, Bolingbrook, IL, USA aut Sivananthan Sivalingam Microphysics Laboratory, University of Illinois at Chicago, Chicago, IL, USA aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3283-3287 0361-5235 42:11<3283 2013 42 11664 https://doi.org/10.1007/s11664-013-2726-5 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2726-5 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Buurma Christopher Microphysics Laboratory, University of Illinois at Chicago, Chicago, IL, USA aut NATIONALLICENCE 700 1- Boieriu Paul EPIR Technologies, Bolingbrook, IL, USA aut NATIONALLICENCE 700 1- Bommena Ramana EPIR Technologies, Bolingbrook, IL, USA aut NATIONALLICENCE 700 1- Sivananthan Sivalingam Microphysics Laboratory, University of Illinois at Chicago, Chicago, IL, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3283-3287 0361-5235 42:11<3283 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer