naa a22 4500 510805450 CHVBK 20180411083415.0 cr unu---uuuuu 180411e20131101xx s 000 0 eng 10.1007/s11664-013-2762-1 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2762-1 Ge-ZnSSe Spatial Wavefunction Switched (SWS) FETs to Implement Multibit SRAMs and Novel Quaternary Logic [Elektronische Daten] [P. Gogna, E. Suarez, M. Lingalugari, J. Chandy, E. Heller, E.-S. Hasaneen, F.-C. Jain] This paper describes novel multibit static random-access memories (SRAMs) implemented using four-channel spatial wavefunction switched field-effect transistors (SWS FETs) with Ge quantum wells and ZnSSe barriers. A two-bit SRAM cell consists of two back-to-back connected four-channel SWS FETs, where each SWS FET serves as a quaternary inverter. This architecture results in a reduction of the field-effect transistor (FET) count by 75% and data interconnect density by 50%. The designed two-bit SRAM cell is simulated using Berkeley short-channel insulated-gate field-effect transistor equivalent-channel models (for 25-nm FETs). In addition, the binary interface logic and conversion circuitry are designed to integrate the SWS SRAM technology. Our motivation is to stack up multiple bits on a single SRAM cell without multiplying the transistor count. The concept of spatial wavefunction switching (SWS) in the FET structure has been verified experimentally for two- and four-well structures. Quantum simulations exhibiting SWS in four-well Ge SWS FET structures, using the ZnSe/ZnS/ZnMgS/ZnSe gate insulator, are presented. These structures offer higher contrast than Si-SiGe SWS FETs. TMS, 2013 SWS FETs nationallicence two-bit SRAM cells nationallicence quaternary logic nationallicence multivalued logic nationallicence quantum wells nationallicence Gogna P. Department of Electrical and Computer Engineering, University of Connecticut, 06269, Storrs, CT, USA aut Suarez E. Department of Electrical and Computer Engineering, University of Connecticut, 06269, Storrs, CT, USA aut Lingalugari M. Department of Electrical and Computer Engineering, University of Connecticut, 06269, Storrs, CT, USA aut Chandy J. Department of Electrical and Computer Engineering, University of Connecticut, 06269, Storrs, CT, USA aut Heller E. Synopsys Inc., 10562, Ossining, NY, USA aut Hasaneen E.-S Electrical Engineering Department, Aswan University, Aswân, Egypt aut Jain F.-C Department of Electrical and Computer Engineering, University of Connecticut, 06269, Storrs, CT, USA aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3337-3343 0361-5235 42:11<3337 2013 42 11664 https://doi.org/10.1007/s11664-013-2762-1 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2762-1 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Gogna P. Department of Electrical and Computer Engineering, University of Connecticut, 06269, Storrs, CT, USA aut NATIONALLICENCE 700 1- Suarez E. Department of Electrical and Computer Engineering, University of Connecticut, 06269, Storrs, CT, USA aut NATIONALLICENCE 700 1- Lingalugari M. Department of Electrical and Computer Engineering, University of Connecticut, 06269, Storrs, CT, USA aut NATIONALLICENCE 700 1- Chandy J. Department of Electrical and Computer Engineering, University of Connecticut, 06269, Storrs, CT, USA aut NATIONALLICENCE 700 1- Heller E. Synopsys Inc., 10562, Ossining, NY, USA aut NATIONALLICENCE 700 1- Hasaneen E.-S Electrical Engineering Department, Aswan University, Aswân, Egypt aut NATIONALLICENCE 700 1- Jain F.-C Department of Electrical and Computer Engineering, University of Connecticut, 06269, Storrs, CT, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3337-3343 0361-5235 42:11<3337 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer