naa a22 4500 510805469 CHVBK 20180411083416.0 cr unu---uuuuu 180411e20131101xx s 000 0 eng 10.1007/s11664-013-2739-0 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2739-0 Arsenic p -Doping of HgCdTe Grown by Molecular Beam Epitaxy (MBE): A Solved Problem? [Elektronische Daten] [James Garland, Christoph Grein, Sivalingam Sivananthan] The goal of achieving well-controlled, reproducibly p-doped mercury cadmium telluride (HgCdTe) with sharp p-n junctions and low Shockley-Read-Hall contribution τ SRH to the minority carrier lifetime τ has been pursued for the past 30years by the HgCdTe molecular beam epitaxial (MBE) growth community, but remains elusive. On the other hand, n-doping with In avoids the short τ SRH characteristic of arsenic-doped MBE-grown HgCdTe and is well controlled, stable, and reproducibly 100% activated as-grown. However, as discussed herein, because of inherent limitations of n-doped absorber layers, overcoming the challenges of successfully p-doping HgCdTe remains an important problem, especially for long-wavelength infrared detectors. We briefly review the achievements that have been made in p-doping HgCdTe, point out the reasons why achieving well-controlled, reproducibly p-doped MBE-grown HgCdTe with a lifetime τ not limited by τ SRH remains a very important task, discuss the probable origin of the short τ SRH in MBE-grown HgCdTe, and discuss possible ways to achieve much longer values of τ SRH in MBE-grown p-doped HgCdTe. TMS, 2013 HgCdTe nationallicence p -doping nationallicence arsenic nationallicence recombination lifetimes nationallicence Shockley-Read-Hall nationallicence Auger nationallicence activation annealing nationallicence Garland James EPIR Technologies, Inc., 60440, Bolingbrook, IL, USA aut Grein Christoph Episensors, Inc., 60440, Bolingbrook, IL, USA aut Sivananthan Sivalingam EPIR Technologies, Inc., 60440, Bolingbrook, IL, USA aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3331-3336 0361-5235 42:11<3331 2013 42 11664 https://doi.org/10.1007/s11664-013-2739-0 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2739-0 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Garland James EPIR Technologies, Inc., 60440, Bolingbrook, IL, USA aut NATIONALLICENCE 700 1- Grein Christoph Episensors, Inc., 60440, Bolingbrook, IL, USA aut NATIONALLICENCE 700 1- Sivananthan Sivalingam EPIR Technologies, Inc., 60440, Bolingbrook, IL, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3331-3336 0361-5235 42:11<3331 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer