naa a22 4500 510817831 CHVBK 20180411083516.0 cr unu---uuuuu 180411e20130601xx s 000 0 eng 10.1007/s11468-012-9381-1 doi (NATIONALLICENCE)springer-10.1007/s11468-012-9381-1 Polarization-Insensitive Metal-Semiconductor-Metal Nanoplasmonic Structures for Ultrafast Ultraviolet Detectors [Elektronische Daten] [Haifeng Hu, Xie Zeng, Chong Tong, Wayne Anderson, Qiaoqiang Gan, Jie Deng, Suhua Jiang] We propose a theoretical design principle of polarization-insensitive metal-semiconductor-metal (MSM) structure for ultraviolet photodetectors based on one-dimensional nanogratings. Because the Fabry-Pérot cavity modes supported by a 100-nm-thick ZnO layer with nanostructures for transverse electric and transverse magnetic polarized incidence overlap with each other, a polarization-insensitive absorption enhancement for the ZnO layer at UV wavelengths is achieved, which can be implemented as a nano-interdigitated electrode to address a long-existing limitation between the speed and the responsivity for conventional MSM photodetectors. Springer Science+Business Media, LLC, 2012 Ultraviolet detector nationallicence Metal-semiconductor-metal structure nationallicence Nanoplasmonics nationallicence Hu Haifeng Department of Electrical Engineering, The State University of New York at Buffalo, 14260, Buffalo, NY, USA aut Zeng Xie Department of Electrical Engineering, The State University of New York at Buffalo, 14260, Buffalo, NY, USA aut Tong Chong Department of Electrical Engineering, The State University of New York at Buffalo, 14260, Buffalo, NY, USA aut Anderson Wayne Department of Electrical Engineering, The State University of New York at Buffalo, 14260, Buffalo, NY, USA aut Gan Qiaoqiang Department of Electrical Engineering, The State University of New York at Buffalo, 14260, Buffalo, NY, USA aut Deng Jie Semiconductor Research and Development Center, IBM Essex Junction, 05452, Burlington, VT, USA aut Jiang Suhua Department of Materials Science, Fudan University, 200433, Shanghai, China aut Plasmonics Springer US; http://www.springer-ny.com 8/2(2013-06-01), 239-247 1557-1955 8:2<239 2013 8 11468 https://doi.org/10.1007/s11468-012-9381-1 text/html Onlinezugriff via DOI 1 brief-communication jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11468-012-9381-1 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Hu Haifeng Department of Electrical Engineering, The State University of New York at Buffalo, 14260, Buffalo, NY, USA aut NATIONALLICENCE 700 1- Zeng Xie Department of Electrical Engineering, The State University of New York at Buffalo, 14260, Buffalo, NY, USA aut NATIONALLICENCE 700 1- Tong Chong Department of Electrical Engineering, The State University of New York at Buffalo, 14260, Buffalo, NY, USA aut NATIONALLICENCE 700 1- Anderson Wayne Department of Electrical Engineering, The State University of New York at Buffalo, 14260, Buffalo, NY, USA aut NATIONALLICENCE 700 1- Gan Qiaoqiang Department of Electrical Engineering, The State University of New York at Buffalo, 14260, Buffalo, NY, USA aut NATIONALLICENCE 700 1- Deng Jie Semiconductor Research and Development Center, IBM Essex Junction, 05452, Burlington, VT, USA aut NATIONALLICENCE 700 1- Jiang Suhua Department of Materials Science, Fudan University, 200433, Shanghai, China aut NATIONALLICENCE 773 0- Plasmonics Springer US; http://www.springer-ny.com 8/2(2013-06-01), 239-247 1557-1955 8:2<239 2013 8 11468 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer