naa a22 4500 510819710 CHVBK 20180411083525.0 cr unu---uuuuu 180411e20130701xx s 000 0 eng 10.1007/s11814-013-0101-0 doi (NATIONALLICENCE)springer-10.1007/s11814-013-0101-0 Non-vacuum deposition of CIGS absorber films for low-cost thin film solar cells [Elektronische Daten] [Dongwook Lee, Kijung Yong] Thin film solar cells composed of chalcopyrite Cu(In1−x Ga x )(Se1−y S y )2 (CIGSSe) absorbers have gained considerable attention in recent years in an effort to develop sustainable technologies for harnessing clean energy. Nonvacuum solution methods can reduce production costs by replacing vacuum-based deposition methods with large-scale, high-throughput processes. The efficient use of materials can reduce production costs. Non-vacuum processes generally rely on two sequential steps: solution-coating, followed by a post-annealing process. Depending on the point at which the CIGS phase evolves, non-vacuum processes can be categorized as nanoparticle (NP) approaches or molecular precursor approaches. These two types of liquid processes are believed to be compatible with a variety of applications, such as roll-to-roll coating for the production of flexible, portable devices. Additional thermal treatments using a gaseous chalcogen or oxygen can improve the absorber quality. This review describes the current status of chalcopyrite thin film solar cells fabrication methods via low-cost solution routes. An analysis of recently published reports describing liquid-based deposition methods is introduced, and the features of the development steps are compared. Finally, a discussion and future outlook are offered. Korean Institute of Chemical Engineers, Seoul, Korea, 2013 CIGS nationallicence Thin Film Solar Cell nationallicence Non-vacuum Process nationallicence Solution Deposition nationallicence Nanoparticle nationallicence Molecular Precursor nationallicence Lee Dongwook Surface Chemistry Laboratory of Electronic Materials (SCHEMA), Department of Chemical Engineering, POSTECH, 790-784, Pohang, Korea aut Yong Kijung Surface Chemistry Laboratory of Electronic Materials (SCHEMA), Department of Chemical Engineering, POSTECH, 790-784, Pohang, Korea aut Korean Journal of Chemical Engineering Springer US; http://www.springer-ny.com 30/7(2013-07-01), 1347-1358 0256-1115 30:7<1347 2013 30 11814 https://doi.org/10.1007/s11814-013-0101-0 text/html Onlinezugriff via DOI 1 review-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11814-013-0101-0 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Lee Dongwook Surface Chemistry Laboratory of Electronic Materials (SCHEMA), Department of Chemical Engineering, POSTECH, 790-784, Pohang, Korea aut NATIONALLICENCE 700 1- Yong Kijung Surface Chemistry Laboratory of Electronic Materials (SCHEMA), Department of Chemical Engineering, POSTECH, 790-784, Pohang, Korea aut NATIONALLICENCE 773 0- Korean Journal of Chemical Engineering Springer US; http://www.springer-ny.com 30/7(2013-07-01), 1347-1358 0256-1115 30:7<1347 2013 30 11814 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer