naa a22 4500 510822398 CHVBK 20180411083539.0 cr unu---uuuuu 180411e20130601xx s 000 0 eng 10.1007/s12541-013-0137-4 doi (NATIONALLICENCE)springer-10.1007/s12541-013-0137-4 Kim BoHung School of Mechanical Engineering, University of Ulsan, Daehak-ro 93, 680-749, Namgu, Ulsan, South Korea aut Interface thermal resistance modeling of the silicon-argon interface [Elektronische Daten] [BoHung Kim] Advancements in nanoscale precision engineering require an in-depth understanding of energy transport. The thermal properties of fluids containing nano-particles significantly depend on the particle/fluid volume ratio at high interface thermal resistance lengths (Kapitza lengths). However, there is a lack of fundamental understanding of nano-scale thermal transport based on the continuum mechanics. In nano-scale thermal transport, the molecular structure of the liquid and surfaces and their interactions on atomic length scales are indispensable. In this study, a molecular level investigation of the thermal resistance at the silicon-argon interface is implemented using molecular dynamics (MD) simulations. This research investigates the interface thermal resistance between liquid argon and silicon surfaces with a perfect crystalline structure. Silicon and argon are chosen due to their broad use in nano-technology applications. Layering of argon liquid molecules on the silicon solid interface was evident for weak wall/fluid interaction strength and bin sizes smaller than the molecular diameter. A recently developed interface thermal resistance (Kapitza resistance) model is used in this study (Kim et al., Journal of Chemical Physics, 129, 174701, 2008). Interactive thermal wall (ITW) model can significantly reduce the computational cost for silicon crystal walls. However, the ITW model needs to properly model thermal interactions with argon molecules using modified liquid/solid interaction strength and thermal oscillation frequency. Our simulation result matches with the case for the ITW model for the similar liquid/solid interaction strength. Korean Society for Precision Engineering and Springer-Verlag Berlin Heidelberg, 2013 Interface thermal resistance nationallicence Kapitza length nationallicence Silicon nationallicence Heat transfer nationallicence Nanofluid nationallicence a : Lattice constant (nm) nationallicence N : Number of molecules (liquid or solid) nationallicence σ : Diameter of molecules (zero potential distance) (nm) nationallicence R K : Kapitza resistance (interface thermal resistance) nationallicence L K : Kapitza length (nm) nationallicence τ : Time step (fs) nationallicence ɛ : Depth of Lennard-Jones potential wall (J) nationallicence ω : Thermal oscillation frequency nationallicence λ : Thermal conductivity (Wm2/K) nationallicence ρ : Number density (N/σ3) nationallicence International Journal of Precision Engineering and Manufacturing Korean Society for Precision Engineering 14/6(2013-06-01), 1023-1028 2234-7593 14:6<1023 2013 14 12541 https://doi.org/10.1007/s12541-013-0137-4 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s12541-013-0137-4 text/html Onlinezugriff via DOI NATIONALLICENCE 100 1- Kim BoHung School of Mechanical Engineering, University of Ulsan, Daehak-ro 93, 680-749, Namgu, Ulsan, South Korea aut NATIONALLICENCE 773 0- International Journal of Precision Engineering and Manufacturing Korean Society for Precision Engineering 14/6(2013-06-01), 1023-1028 2234-7593 14:6<1023 2013 14 12541 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer