A quantitative model for charge carrier transport, trapping and recombination in nanocrystal-based solar cells

Verfasser / Beitragende:
[Deniz Bozyigit, Weyde; id_orcid 0000-0002-7572-499X Lin, Nuri; id_orcid 0000-0001-6593-7601 Yazdani, Olesya; id_orcid 0000-0002-1653-1338 Yarema, Vanessa; id_orcid 0000-0001-6435-0227 Wood]
Ort, Verlag, Jahr:
2015
Enthalten in:
Nature Communications, 6, p. 6180
Format:
Artikel (online)
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024 7 0 |a 10.3929/ethz-b-000098798  |2 doi 
024 7 0 |a 10.1038/ncomms7180  |2 doi 
035 |a (ETHRESEARCH)oai:www.research-collecti.ethz.ch:20.500.11850/98798 
245 0 2 |a A quantitative model for charge carrier transport, trapping and recombination in nanocrystal-based solar cells  |h [Elektronische Daten]  |c [Deniz Bozyigit, Weyde; id_orcid 0000-0002-7572-499X Lin, Nuri; id_orcid 0000-0001-6593-7601 Yazdani, Olesya; id_orcid 0000-0002-1653-1338 Yarema, Vanessa; id_orcid 0000-0001-6435-0227 Wood] 
246 0 |a Nat Commun 
506 |a Open access  |2 ethresearch 
520 3 |a Improving devices incorporating solution-processed nanocrystal-based semiconductors requires a better understanding of charge transport in these complex, inorganic-organic materials. Here we perform a systematic study on PbS nanocrystal-based diodes using temperature-dependent current-voltage characterization and thermal admittance spectroscopy to develop a model for charge transport that is applicable to different nanocrystal-solids and device architectures. Our analysis confirms that charge transport occurs in states that derive from the quantum-confined electronic levels of the individual nanocrystals and is governed by diffusion-controlled trap-assisted recombination. The current is limited not by the Schottky effect, but by Fermi-level pinning because of trap states that is independent of the electrode-nanocrystal interface. Our model successfully explains the non-trivial trends in charge transport as a function of nanocrystal size and the origins of the trade-offs facing the optimization of nanocrystal-based solar cells. We use the insights from our charge transport model to formulate design guidelines for engineering higher-performance nanocrystal-based devices. 
540 |a Creative Commons Attribution 4.0 International  |u http://creativecommons.org/licenses/by/4.0  |2 ethresearch 
700 1 |a Bozyigit  |D Deniz  |e joint author 
700 1 |a Lin  |D Weyde; id_orcid 0000-0002-7572-499X  |e joint author 
700 1 |a Yazdani  |D Nuri; id_orcid 0000-0001-6593-7601  |e joint author 
700 1 |a Yarema  |D Olesya; id_orcid 0000-0002-1653-1338  |e joint author 
700 1 |a Wood  |D Vanessa; id_orcid 0000-0001-6435-0227  |e joint author 
773 0 |t Nature Communications  |d London : Nature Publishing Group  |g 6, p. 6180  |x 2041-1723 
856 4 0 |u http://hdl.handle.net/20.500.11850/98798  |q text/html  |z WWW-Backlink auf das Repository (Open access) 
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950 |B ETHRESEARCH  |P 700  |E 1-  |a Bozyigit  |D Deniz  |e joint author 
950 |B ETHRESEARCH  |P 700  |E 1-  |a Lin  |D Weyde; id_orcid 0000-0002-7572-499X  |e joint author 
950 |B ETHRESEARCH  |P 700  |E 1-  |a Yazdani  |D Nuri; id_orcid 0000-0001-6593-7601  |e joint author 
950 |B ETHRESEARCH  |P 700  |E 1-  |a Yarema  |D Olesya; id_orcid 0000-0002-1653-1338  |e joint author 
950 |B ETHRESEARCH  |P 700  |E 1-  |a Wood  |D Vanessa; id_orcid 0000-0001-6435-0227  |e joint author 
950 |B ETHRESEARCH  |P 773  |E 0-  |t Nature Communications  |d London : Nature Publishing Group  |g 6, p. 6180  |x 2041-1723 
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