Effect of the Formation of Silicon Oxide on the Sign, Magnitude and Formation of Surface Charge Upon Water Adsorption on a Silicon Surface
| LEADER | caa a22 4500 | ||
|---|---|---|---|
| 001 | 605451338 | ||
| 003 | CHVBK | ||
| 005 | 20210128100151.0 | ||
| 007 | cr unu---uuuuu | ||
| 008 | 210128e20150701xx s 000 0 eng | ||
| 024 | 7 | 0 | |a 10.1007/s11237-015-9412-z |2 doi |
| 035 | |a (NATIONALLICENCE)springer-10.1007/s11237-015-9412-z | ||
| 245 | 0 | 0 | |a Effect of the Formation of Silicon Oxide on the Sign, Magnitude and Formation of Surface Charge Upon Water Adsorption on a Silicon Surface |h [Elektronische Daten] |c [V. Gromashevskii, N. Tatyanenko, B. Snopok] |
| 520 | 3 | |a The adsorption of water vapor on the Si(100) surface was found to proceed with formation of a charged form of an adsorption complex using the transverse acoustoelectric effect in the layered piezodielectric/air-gap/semiconductor structure. The sign of the localized surface charge is a function of the formation of silicon oxide and changes from positive to negative in going from the crystalline silicon(100) surface to the oxide-coated surface. Discrete states of the surface charge were observed. | |
| 540 | |a Springer Science+Business Media New York, 2015 | ||
| 690 | 7 | |a adsorption |2 nationallicence | |
| 690 | 7 | |a surface charge |2 nationallicence | |
| 690 | 7 | |a water |2 nationallicence | |
| 690 | 7 | |a silicon |2 nationallicence | |
| 690 | 7 | |a transverse acoustoelectric effect |2 nationallicence | |
| 700 | 1 | |a Gromashevskii |D V. |u V. E. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospekt Nauky, 41, 03028, Kyiv, Ukraine |4 aut | |
| 700 | 1 | |a Tatyanenko |D N. |u V. E. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospekt Nauky, 41, 03028, Kyiv, Ukraine |4 aut | |
| 700 | 1 | |a Snopok |D B. |u V. E. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospekt Nauky, 41, 03028, Kyiv, Ukraine |4 aut | |
| 773 | 0 | |t Theoretical and Experimental Chemistry |d Springer US; http://www.springer-ny.com |g 51/3(2015-07-01), 170-176 |x 0040-5760 |q 51:3<170 |1 2015 |2 51 |o 11237 | |
| 856 | 4 | 0 | |u https://doi.org/10.1007/s11237-015-9412-z |q text/html |z Onlinezugriff via DOI |
| 898 | |a BK010053 |b XK010053 |c XK010000 | ||
| 900 | 7 | |a Metadata rights reserved |b Springer special CC-BY-NC licence |2 nationallicence | |
| 908 | |D 1 |a research-article |2 jats | ||
| 949 | |B NATIONALLICENCE |F NATIONALLICENCE |b NL-springer | ||
| 950 | |B NATIONALLICENCE |P 856 |E 40 |u https://doi.org/10.1007/s11237-015-9412-z |q text/html |z Onlinezugriff via DOI | ||
| 950 | |B NATIONALLICENCE |P 700 |E 1- |a Gromashevskii |D V. |u V. E. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospekt Nauky, 41, 03028, Kyiv, Ukraine |4 aut | ||
| 950 | |B NATIONALLICENCE |P 700 |E 1- |a Tatyanenko |D N. |u V. E. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospekt Nauky, 41, 03028, Kyiv, Ukraine |4 aut | ||
| 950 | |B NATIONALLICENCE |P 700 |E 1- |a Snopok |D B. |u V. E. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospekt Nauky, 41, 03028, Kyiv, Ukraine |4 aut | ||
| 950 | |B NATIONALLICENCE |P 773 |E 0- |t Theoretical and Experimental Chemistry |d Springer US; http://www.springer-ny.com |g 51/3(2015-07-01), 170-176 |x 0040-5760 |q 51:3<170 |1 2015 |2 51 |o 11237 | ||