caa a22 4500 605451338 CHVBK 20210128100151.0 cr unu---uuuuu 210128e20150701xx s 000 0 eng 10.1007/s11237-015-9412-z doi (NATIONALLICENCE)springer-10.1007/s11237-015-9412-z Effect of the Formation of Silicon Oxide on the Sign, Magnitude and Formation of Surface Charge Upon Water Adsorption on a Silicon Surface [Elektronische Daten] [V. Gromashevskii, N. Tatyanenko, B. Snopok] The adsorption of water vapor on the Si(100) surface was found to proceed with formation of a charged form of an adsorption complex using the transverse acoustoelectric effect in the layered piezodielectric/air-gap/semiconductor structure. The sign of the localized surface charge is a function of the formation of silicon oxide and changes from positive to negative in going from the crystalline silicon(100) surface to the oxide-coated surface. Discrete states of the surface charge were observed. Springer Science+Business Media New York, 2015 adsorption nationallicence surface charge nationallicence water nationallicence silicon nationallicence transverse acoustoelectric effect nationallicence Gromashevskii V. V. E. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospekt Nauky, 41, 03028, Kyiv, Ukraine aut Tatyanenko N. V. E. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospekt Nauky, 41, 03028, Kyiv, Ukraine aut Snopok B. V. E. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospekt Nauky, 41, 03028, Kyiv, Ukraine aut Theoretical and Experimental Chemistry Springer US; http://www.springer-ny.com 51/3(2015-07-01), 170-176 0040-5760 51:3<170 2015 51 11237 https://doi.org/10.1007/s11237-015-9412-z text/html Onlinezugriff via DOI BK010053 XK010053 XK010000 Metadata rights reserved Springer special CC-BY-NC licence nationallicence 1 research-article jats NATIONALLICENCE NATIONALLICENCE NL-springer NATIONALLICENCE 856 40 https://doi.org/10.1007/s11237-015-9412-z text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Gromashevskii V. V. E. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospekt Nauky, 41, 03028, Kyiv, Ukraine aut NATIONALLICENCE 700 1- Tatyanenko N. V. E. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospekt Nauky, 41, 03028, Kyiv, Ukraine aut NATIONALLICENCE 700 1- Snopok B. V. E. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospekt Nauky, 41, 03028, Kyiv, Ukraine aut NATIONALLICENCE 773 0- Theoretical and Experimental Chemistry Springer US; http://www.springer-ny.com 51/3(2015-07-01), 170-176 0040-5760 51:3<170 2015 51 11237