A double-sided, single-chip integration scheme using through-silicon-via for neural sensing applications

Verfasser / Beitragende:
[Chih-Wei Chang, Lei-Chun Chou, Po-Tsang Huang, Shang-Lin Wu, Shih-Wei Lee, Ching-Te Chuang, Kuan-Neng Chen, Wei Hwang, Kuo-Hua Chen, Chi-Tsung Chiu, Ho-Ming Tong, Jin-Chern Chiou]
Ort, Verlag, Jahr:
2015
Enthalten in:
Biomedical Microdevices, 17/1(2015-02-01), 1-15
Format:
Artikel (online)
ID: 605479399
LEADER caa a22 4500
001 605479399
003 CHVBK
005 20210128100410.0
007 cr unu---uuuuu
008 210128e20150201xx s 000 0 eng
024 7 0 |a 10.1007/s10544-014-9906-9  |2 doi 
035 |a (NATIONALLICENCE)springer-10.1007/s10544-014-9906-9 
245 0 2 |a A double-sided, single-chip integration scheme using through-silicon-via for neural sensing applications  |h [Elektronische Daten]  |c [Chih-Wei Chang, Lei-Chun Chou, Po-Tsang Huang, Shang-Lin Wu, Shih-Wei Lee, Ching-Te Chuang, Kuan-Neng Chen, Wei Hwang, Kuo-Hua Chen, Chi-Tsung Chiu, Ho-Ming Tong, Jin-Chern Chiou] 
520 3 |a We present a new double-sided, single-chip monolithic integration scheme to integrate the CMOS circuits and MEMS structures by using through-silicon-via (TSV). Neural sensing applications were chosen as the implementation example. The proposed heterogeneous device integrates standard 0.18μm CMOS technology, TSV and neural probe array into a compact single chip device. The neural probe array on the back-side of the chip is connected to the CMOS circuits on the front-side of the chip by using low-parasitic TSVs through the chip. Successful fabrication results and detailed characterization demonstrate the feasibility and performance of the neural probe array, TSV and readout circuitry. The fabricated device is 5 × 5mm2 in area, with 16 channels of 150μm-in-length neural probe array on the back-side, 200μm-deep TSV through the chip and CMOS circuits on the front-side. Each channel consists of a 5 × 6 probe array, 3 × 14 TSV array and a differential-difference amplifier (DDA) based analog front-end circuitry with 1.8V supply, 21.88μW power consumption, 108dB CMRR and 2.56 μVrms input referred noise. In-vivo long term implantation demonstrated the feasibility of presented integration scheme after 7 and 58days of implantation. We expect the conceptual realization can be extended for higher density recording array by using the proposed method. 
540 |a Springer Science+Business Media New York, 2015 
690 7 |a Through silicon via  |2 nationallicence 
690 7 |a CMOS technology  |2 nationallicence 
690 7 |a Neural probe array  |2 nationallicence 
690 7 |a Electrode  |2 nationallicence 
690 7 |a Heterogeneous integration  |2 nationallicence 
700 1 |a Chang  |D Chih-Wei  |u Department of Bioengineering, University of California in Los Angeles, 90095, Los Angeles, CA, USA  |4 aut 
700 1 |a Chou  |D Lei-Chun  |u National Chiao Tung University, 30010, Hsinchu, Taiwan  |4 aut 
700 1 |a Huang  |D Po-Tsang  |u National Chiao Tung University, 30010, Hsinchu, Taiwan  |4 aut 
700 1 |a Wu  |D Shang-Lin  |u National Chiao Tung University, 30010, Hsinchu, Taiwan  |4 aut 
700 1 |a Lee  |D Shih-Wei  |u National Chiao Tung University, 30010, Hsinchu, Taiwan  |4 aut 
700 1 |a Chuang  |D Ching-Te  |u National Chiao Tung University, 30010, Hsinchu, Taiwan  |4 aut 
700 1 |a Chen  |D Kuan-Neng  |u National Chiao Tung University, 30010, Hsinchu, Taiwan  |4 aut 
700 1 |a Hwang  |D Wei  |u National Chiao Tung University, 30010, Hsinchu, Taiwan  |4 aut 
700 1 |a Chen  |D Kuo-Hua  |u Advanced Semiconductor Engineering Group, 81170, Kaohsiung, Taiwan  |4 aut 
700 1 |a Chiu  |D Chi-Tsung  |u Advanced Semiconductor Engineering Group, 81170, Kaohsiung, Taiwan  |4 aut 
700 1 |a Tong  |D Ho-Ming  |u Advanced Semiconductor Engineering Group, 81170, Kaohsiung, Taiwan  |4 aut 
700 1 |a Chiou  |D Jin-Chern  |u National Chiao Tung University, 30010, Hsinchu, Taiwan  |4 aut 
773 0 |t Biomedical Microdevices  |d Springer US; http://www.springer-ny.com  |g 17/1(2015-02-01), 1-15  |x 1387-2176  |q 17:1<1  |1 2015  |2 17  |o 10544 
856 4 0 |u https://doi.org/10.1007/s10544-014-9906-9  |q text/html  |z Onlinezugriff via DOI 
898 |a BK010053  |b XK010053  |c XK010000 
900 7 |a Metadata rights reserved  |b Springer special CC-BY-NC licence  |2 nationallicence 
908 |D 1  |a research-article  |2 jats 
949 |B NATIONALLICENCE  |F NATIONALLICENCE  |b NL-springer 
950 |B NATIONALLICENCE  |P 856  |E 40  |u https://doi.org/10.1007/s10544-014-9906-9  |q text/html  |z Onlinezugriff via DOI 
950 |B NATIONALLICENCE  |P 700  |E 1-  |a Chang  |D Chih-Wei  |u Department of Bioengineering, University of California in Los Angeles, 90095, Los Angeles, CA, USA  |4 aut 
950 |B NATIONALLICENCE  |P 700  |E 1-  |a Chou  |D Lei-Chun  |u National Chiao Tung University, 30010, Hsinchu, Taiwan  |4 aut 
950 |B NATIONALLICENCE  |P 700  |E 1-  |a Huang  |D Po-Tsang  |u National Chiao Tung University, 30010, Hsinchu, Taiwan  |4 aut 
950 |B NATIONALLICENCE  |P 700  |E 1-  |a Wu  |D Shang-Lin  |u National Chiao Tung University, 30010, Hsinchu, Taiwan  |4 aut 
950 |B NATIONALLICENCE  |P 700  |E 1-  |a Lee  |D Shih-Wei  |u National Chiao Tung University, 30010, Hsinchu, Taiwan  |4 aut 
950 |B NATIONALLICENCE  |P 700  |E 1-  |a Chuang  |D Ching-Te  |u National Chiao Tung University, 30010, Hsinchu, Taiwan  |4 aut 
950 |B NATIONALLICENCE  |P 700  |E 1-  |a Chen  |D Kuan-Neng  |u National Chiao Tung University, 30010, Hsinchu, Taiwan  |4 aut 
950 |B NATIONALLICENCE  |P 700  |E 1-  |a Hwang  |D Wei  |u National Chiao Tung University, 30010, Hsinchu, Taiwan  |4 aut 
950 |B NATIONALLICENCE  |P 700  |E 1-  |a Chen  |D Kuo-Hua  |u Advanced Semiconductor Engineering Group, 81170, Kaohsiung, Taiwan  |4 aut 
950 |B NATIONALLICENCE  |P 700  |E 1-  |a Chiu  |D Chi-Tsung  |u Advanced Semiconductor Engineering Group, 81170, Kaohsiung, Taiwan  |4 aut 
950 |B NATIONALLICENCE  |P 700  |E 1-  |a Tong  |D Ho-Ming  |u Advanced Semiconductor Engineering Group, 81170, Kaohsiung, Taiwan  |4 aut 
950 |B NATIONALLICENCE  |P 700  |E 1-  |a Chiou  |D Jin-Chern  |u National Chiao Tung University, 30010, Hsinchu, Taiwan  |4 aut 
950 |B NATIONALLICENCE  |P 773  |E 0-  |t Biomedical Microdevices  |d Springer US; http://www.springer-ny.com  |g 17/1(2015-02-01), 1-15  |x 1387-2176  |q 17:1<1  |1 2015  |2 17  |o 10544