Electronic transport properties of BN sheet on adsorption of ammonia (NH3) gas

Verfasser / Beitragende:
[Anurag Srivastava, Chetan Bhat, Sumit Jain, Pankaj Mishra, Ranjeet Brajpuriya]
Ort, Verlag, Jahr:
2015
Enthalten in:
Journal of Molecular Modeling, 21/3(2015-03-01), 1-8
Format:
Artikel (online)
ID: 605512094
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024 7 0 |a 10.1007/s00894-015-2595-3  |2 doi 
035 |a (NATIONALLICENCE)springer-10.1007/s00894-015-2595-3 
245 0 0 |a Electronic transport properties of BN sheet on adsorption of ammonia (NH3) gas  |h [Elektronische Daten]  |c [Anurag Srivastava, Chetan Bhat, Sumit Jain, Pankaj Mishra, Ranjeet Brajpuriya] 
520 3 |a We report the detection of ammonia gas through electronic and transport properties analysis of boron nitride sheet. The density functional theory (DFT) based ab initio approach has been used to calculate the electronic and transport properties of BN sheet in presence of ammonia gas. Analysis confirms that the band gap of the sheet increases due to presence of ammonia. Out of different positions, the bridge site is the most favorable position for adsorption of ammonia and the mechanism of interaction falls between weak electrostatic interaction and chemisorption. On relaxation, change in the bond angles of the ammonia molecule in various configurations has been reported with the distance between NH3 and the sheet. An increase in the transmission of electrons has been observed on increasing the bias voltage and I-V relationship. This confirms that, the current increases on applying the bias when ammonia is introduced while a very small current flows for pure BN sheet. Graphical Abstract Current voltage relationship of BN sheet on adsorption of (NH3) 
540 |a Springer-Verlag Berlin Heidelberg, 2015 
690 7 |a Ab initio  |2 nationallicence 
690 7 |a Ammonia  |2 nationallicence 
690 7 |a Band structure  |2 nationallicence 
690 7 |a Boron Nitrite  |2 nationallicence 
690 7 |a I-V  |2 nationallicence 
690 7 |a Sensor  |2 nationallicence 
700 1 |a Srivastava  |D Anurag  |u Advanced Material Research Group, CNT Lab, ABV-IIITM, Gwalior, M.P., India  |4 aut 
700 1 |a Bhat  |D Chetan  |u Advanced Material Research Group, CNT Lab, ABV-IIITM, Gwalior, M.P., India  |4 aut 
700 1 |a Jain  |D Sumit  |u Advanced Material Research Group, CNT Lab, ABV-IIITM, Gwalior, M.P., India  |4 aut 
700 1 |a Mishra  |D Pankaj  |u Amity School of Applied Science Amity University, Gwalior, M.P., India  |4 aut 
700 1 |a Brajpuriya  |D Ranjeet  |u Amity School of Applied Science, Amity University, Haryana, India  |4 aut 
773 0 |t Journal of Molecular Modeling  |d Springer Berlin Heidelberg  |g 21/3(2015-03-01), 1-8  |x 1610-2940  |q 21:3<1  |1 2015  |2 21  |o 894 
856 4 0 |u https://doi.org/10.1007/s00894-015-2595-3  |q text/html  |z Onlinezugriff via DOI 
898 |a BK010053  |b XK010053  |c XK010000 
900 7 |a Metadata rights reserved  |b Springer special CC-BY-NC licence  |2 nationallicence 
908 |D 1  |a research-article  |2 jats 
949 |B NATIONALLICENCE  |F NATIONALLICENCE  |b NL-springer 
950 |B NATIONALLICENCE  |P 856  |E 40  |u https://doi.org/10.1007/s00894-015-2595-3  |q text/html  |z Onlinezugriff via DOI 
950 |B NATIONALLICENCE  |P 700  |E 1-  |a Srivastava  |D Anurag  |u Advanced Material Research Group, CNT Lab, ABV-IIITM, Gwalior, M.P., India  |4 aut 
950 |B NATIONALLICENCE  |P 700  |E 1-  |a Bhat  |D Chetan  |u Advanced Material Research Group, CNT Lab, ABV-IIITM, Gwalior, M.P., India  |4 aut 
950 |B NATIONALLICENCE  |P 700  |E 1-  |a Jain  |D Sumit  |u Advanced Material Research Group, CNT Lab, ABV-IIITM, Gwalior, M.P., India  |4 aut 
950 |B NATIONALLICENCE  |P 700  |E 1-  |a Mishra  |D Pankaj  |u Amity School of Applied Science Amity University, Gwalior, M.P., India  |4 aut 
950 |B NATIONALLICENCE  |P 700  |E 1-  |a Brajpuriya  |D Ranjeet  |u Amity School of Applied Science, Amity University, Haryana, India  |4 aut 
950 |B NATIONALLICENCE  |P 773  |E 0-  |t Journal of Molecular Modeling  |d Springer Berlin Heidelberg  |g 21/3(2015-03-01), 1-8  |x 1610-2940  |q 21:3<1  |1 2015  |2 21  |o 894