Bonding, aromaticity, and planar tetracoordinated carbon in Si2CH2 and Ge2CH2

Verfasser / Beitragende:
[Stefan Vogt-Geisse, Judy Wu, Paul Schleyer, Henry Schaefer III]
Ort, Verlag, Jahr:
2015
Enthalten in:
Journal of Molecular Modeling, 21/8(2015-08-01), 1-8
Format:
Artikel (online)
ID: 605512817
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024 7 0 |a 10.1007/s00894-015-2736-8  |2 doi 
035 |a (NATIONALLICENCE)springer-10.1007/s00894-015-2736-8 
245 0 0 |a Bonding, aromaticity, and planar tetracoordinated carbon in Si2CH2 and Ge2CH2  |h [Elektronische Daten]  |c [Stefan Vogt-Geisse, Judy Wu, Paul Schleyer, Henry Schaefer III] 
520 3 |a Natural bond orbital (NBO) analyses and dissected nucleus-independent chemical shifts (NICS π z z ) were computed to evaluate the bonding (bond type, electron occupation, hybridization) and aromatic character of the three lowest-lying Si2CH2 (1-Si, 2-Si, 3-Si) and Ge2CH2 (1-Ge, 2-Ge, 3-Ge) isomers. While their carbon C3H2 analogs favor classical alkene, allene, and alkyne type bonding, these Si and Ge derivatives are more polarizable and can favor "highly electron delocalized”? and "non-classical”? structures. The lowest energy Si 2CH2 and Ge 2CH2 isomers, 1-Si and 1-Ge, exhibit two sets of 3-center 2-electron (3c-2e) bonding; a π-3c-2e bond involving the heavy atoms (C-Si-Si and C-Ge-Ge), and a σ-3c-2e bond (Si-H-Si, Ge-H-Ge). Both 3-Si and 3-Ge exhibit π and σ-3c-2e bonding involving a planar tetracoordinated carbon (ptC) center. Despite their highly electron delocalized nature, all of the Si2CH2 and Ge2CH2 isomers considered display only modest two π electron aromatic character (NICS(0) π z z =--6.2 to -8.9 ppm, computed at the heavy atom ring center) compared to the cyclic-C 3H2 (-13.3 ppm). Graphical Abstract The three lowest Si2CH2 and Ge2CH2 isomers. 
540 |a Springer-Verlag Berlin Heidelberg, 2015 
690 7 |a Main group chemistry  |2 nationallicence 
690 7 |a Planar tetracoordinated carbon  |2 nationallicence 
690 7 |a Natural bond orbital  |2 nationallicence 
690 7 |a 3-center 2-electron bond  |2 nationallicence 
690 7 |a Nuclear-independent chemical shift  |2 nationallicence 
690 7 |a Aromaticity  |2 nationallicence 
690 7 |a Electrostatic potential  |2 nationallicence 
700 1 |a Vogt-Geisse  |D Stefan  |u Facultad de Química, Pontifícia Universidad Católica de Chile, Santiago, Chile  |4 aut 
700 1 |a Wu  |D Judy  |u Center for Computational Quantum Chemistry, University of Georgia, 30602, Athens, GA, USA  |4 aut 
700 1 |a Schleyer  |D Paul  |u Center for Computational Quantum Chemistry, University of Georgia, 30602, Athens, GA, USA  |4 aut 
700 1 |a Schaefer III  |D Henry  |u Center for Computational Quantum Chemistry, University of Georgia, 30602, Athens, GA, USA  |4 aut 
773 0 |t Journal of Molecular Modeling  |d Springer Berlin Heidelberg  |g 21/8(2015-08-01), 1-8  |x 1610-2940  |q 21:8<1  |1 2015  |2 21  |o 894 
856 4 0 |u https://doi.org/10.1007/s00894-015-2736-8  |q text/html  |z Onlinezugriff via DOI 
898 |a BK010053  |b XK010053  |c XK010000 
900 7 |a Metadata rights reserved  |b Springer special CC-BY-NC licence  |2 nationallicence 
908 |D 1  |a research-article  |2 jats 
949 |B NATIONALLICENCE  |F NATIONALLICENCE  |b NL-springer 
950 |B NATIONALLICENCE  |P 856  |E 40  |u https://doi.org/10.1007/s00894-015-2736-8  |q text/html  |z Onlinezugriff via DOI 
950 |B NATIONALLICENCE  |P 700  |E 1-  |a Vogt-Geisse  |D Stefan  |u Facultad de Química, Pontifícia Universidad Católica de Chile, Santiago, Chile  |4 aut 
950 |B NATIONALLICENCE  |P 700  |E 1-  |a Wu  |D Judy  |u Center for Computational Quantum Chemistry, University of Georgia, 30602, Athens, GA, USA  |4 aut 
950 |B NATIONALLICENCE  |P 700  |E 1-  |a Schleyer  |D Paul  |u Center for Computational Quantum Chemistry, University of Georgia, 30602, Athens, GA, USA  |4 aut 
950 |B NATIONALLICENCE  |P 700  |E 1-  |a Schaefer III  |D Henry  |u Center for Computational Quantum Chemistry, University of Georgia, 30602, Athens, GA, USA  |4 aut 
950 |B NATIONALLICENCE  |P 773  |E 0-  |t Journal of Molecular Modeling  |d Springer Berlin Heidelberg  |g 21/8(2015-08-01), 1-8  |x 1610-2940  |q 21:8<1  |1 2015  |2 21  |o 894