Comparison of halogen bonds in M − X ⋯ N contacts (M=C, Si, Ge and X=Cl, Br)

Verfasser / Beitragende:
[Hossein Jahromi, Kiamars Eskandari, Azam Alizadeh]
Ort, Verlag, Jahr:
2015
Enthalten in:
Journal of Molecular Modeling, 21/5(2015-05-01), 1-9
Format:
Artikel (online)
ID: 605513287
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024 7 0 |a 10.1007/s00894-015-2660-y  |2 doi 
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245 0 0 |a Comparison of halogen bonds in M − X ⋯ N contacts (M=C, Si, Ge and X=Cl, Br)  |h [Elektronische Daten]  |c [Hossein Jahromi, Kiamars Eskandari, Azam Alizadeh] 
520 3 |a The halogen bonds (XB) formed between some Si−X- and Ge−X- (X is Cl and Br) containing molecules and NCH (as a Lewis base) have been investigated and compared with C−X⋯N halogen bond. Although, in all cases, the existence of a positive electrostatic potential (σ-hole) along the extension of M−X was responsible for halogen bond formation, multipole expansion of electrostatic potential reveals that these positive potentials originate from different atomic multipole moments. Indeed, in addition to the monopole moment of M atoms, the quadrupole moment of X in C−X molecules, the dipole moment of the halogen in Si−X molecules and both the dipole and quadrupole moments of X in Ge−X molecules are mainly responsible for the existence of the σ-hole along the extension of the M−X bond. From a different point of view, the distribution of the Laplacian of electron density shows that all the studied M−X⋯N halogen bonds can be regarded as "lump-hole” interactions; a region of charge depletion (hole) in the valence shell charge concentration (VSCC) of the halogen atom interacts with a region of charge concentration (lump) in the VSCC of nitrogen and forms a halogen bond. On the other hand, interacting quantum atoms (IQA) analysis of atomic energies indicates that, in contrast to C−X⋯N contacts, in which the interaction between halogen and nitrogen is attractive, there is a net repulsive interaction between X and N in Si−X⋯N and Ge−X⋯N complexes. Indeed, the attraction between Si/Ge and nitrogen is mainly responsible for the formation of these halogen bonds. Graphical Abstract Contour map of the Laplacian of the electron density (∇2 ρ) of FCGeBr. The arrow indicates the hole in the valence shell charge concentration of bromine 
540 |a Springer-Verlag Berlin Heidelberg, 2015 
690 7 |a Noncovalent interaction  |2 nationallicence 
690 7 |a Halogen bond  |2 nationallicence 
690 7 |a QTAIM  |2 nationallicence 
690 7 |a IQA  |2 nationallicence 
690 7 |a Silicon  |2 nationallicence 
690 7 |a Germanium  |2 nationallicence 
700 1 |a Jahromi  |D Hossein  |u Department of Chemistry, Mahshahr Branch, Islamic Azad University, Mahshahr, Iran  |4 aut 
700 1 |a Eskandari  |D Kiamars  |u Department of Chemistry, Isfahan University of Technology, 84156-83111, Isfahan, Iran  |4 aut 
700 1 |a Alizadeh  |D Azam  |u Department of Chemistry, Damghan University, Damghan, Iran  |4 aut 
773 0 |t Journal of Molecular Modeling  |d Springer Berlin Heidelberg  |g 21/5(2015-05-01), 1-9  |x 1610-2940  |q 21:5<1  |1 2015  |2 21  |o 894 
856 4 0 |u https://doi.org/10.1007/s00894-015-2660-y  |q text/html  |z Onlinezugriff via DOI 
898 |a BK010053  |b XK010053  |c XK010000 
900 7 |a Metadata rights reserved  |b Springer special CC-BY-NC licence  |2 nationallicence 
908 |D 1  |a research-article  |2 jats 
949 |B NATIONALLICENCE  |F NATIONALLICENCE  |b NL-springer 
950 |B NATIONALLICENCE  |P 856  |E 40  |u https://doi.org/10.1007/s00894-015-2660-y  |q text/html  |z Onlinezugriff via DOI 
950 |B NATIONALLICENCE  |P 700  |E 1-  |a Jahromi  |D Hossein  |u Department of Chemistry, Mahshahr Branch, Islamic Azad University, Mahshahr, Iran  |4 aut 
950 |B NATIONALLICENCE  |P 700  |E 1-  |a Eskandari  |D Kiamars  |u Department of Chemistry, Isfahan University of Technology, 84156-83111, Isfahan, Iran  |4 aut 
950 |B NATIONALLICENCE  |P 700  |E 1-  |a Alizadeh  |D Azam  |u Department of Chemistry, Damghan University, Damghan, Iran  |4 aut 
950 |B NATIONALLICENCE  |P 773  |E 0-  |t Journal of Molecular Modeling  |d Springer Berlin Heidelberg  |g 21/5(2015-05-01), 1-9  |x 1610-2940  |q 21:5<1  |1 2015  |2 21  |o 894