caa a22 4500 605513287 CHVBK 20210128100659.0 cr unu---uuuuu 210128e20150501xx s 000 0 eng 10.1007/s00894-015-2660-y doi (NATIONALLICENCE)springer-10.1007/s00894-015-2660-y Comparison of halogen bonds in M − X ⋯ N contacts (M=C, Si, Ge and X=Cl, Br) [Elektronische Daten] [Hossein Jahromi, Kiamars Eskandari, Azam Alizadeh] The halogen bonds (XB) formed between some Si−X- and Ge−X- (X is Cl and Br) containing molecules and NCH (as a Lewis base) have been investigated and compared with C−X⋯N halogen bond. Although, in all cases, the existence of a positive electrostatic potential (σ-hole) along the extension of M−X was responsible for halogen bond formation, multipole expansion of electrostatic potential reveals that these positive potentials originate from different atomic multipole moments. Indeed, in addition to the monopole moment of M atoms, the quadrupole moment of X in C−X molecules, the dipole moment of the halogen in Si−X molecules and both the dipole and quadrupole moments of X in Ge−X molecules are mainly responsible for the existence of the σ-hole along the extension of the M−X bond. From a different point of view, the distribution of the Laplacian of electron density shows that all the studied M−X⋯N halogen bonds can be regarded as "lump-hole” interactions; a region of charge depletion (hole) in the valence shell charge concentration (VSCC) of the halogen atom interacts with a region of charge concentration (lump) in the VSCC of nitrogen and forms a halogen bond. On the other hand, interacting quantum atoms (IQA) analysis of atomic energies indicates that, in contrast to C−X⋯N contacts, in which the interaction between halogen and nitrogen is attractive, there is a net repulsive interaction between X and N in Si−X⋯N and Ge−X⋯N complexes. Indeed, the attraction between Si/Ge and nitrogen is mainly responsible for the formation of these halogen bonds. Graphical Abstract Contour map of the Laplacian of the electron density (∇2 ρ) of FCGeBr. The arrow indicates the hole in the valence shell charge concentration of bromine Springer-Verlag Berlin Heidelberg, 2015 Noncovalent interaction nationallicence Halogen bond nationallicence QTAIM nationallicence IQA nationallicence Silicon nationallicence Germanium nationallicence Jahromi Hossein Department of Chemistry, Mahshahr Branch, Islamic Azad University, Mahshahr, Iran aut Eskandari Kiamars Department of Chemistry, Isfahan University of Technology, 84156-83111, Isfahan, Iran aut Alizadeh Azam Department of Chemistry, Damghan University, Damghan, Iran aut Journal of Molecular Modeling Springer Berlin Heidelberg 21/5(2015-05-01), 1-9 1610-2940 21:5<1 2015 21 894 https://doi.org/10.1007/s00894-015-2660-y text/html Onlinezugriff via DOI BK010053 XK010053 XK010000 Metadata rights reserved Springer special CC-BY-NC licence nationallicence 1 research-article jats NATIONALLICENCE NATIONALLICENCE NL-springer NATIONALLICENCE 856 40 https://doi.org/10.1007/s00894-015-2660-y text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Jahromi Hossein Department of Chemistry, Mahshahr Branch, Islamic Azad University, Mahshahr, Iran aut NATIONALLICENCE 700 1- Eskandari Kiamars Department of Chemistry, Isfahan University of Technology, 84156-83111, Isfahan, Iran aut NATIONALLICENCE 700 1- Alizadeh Azam Department of Chemistry, Damghan University, Damghan, Iran aut NATIONALLICENCE 773 0- Journal of Molecular Modeling Springer Berlin Heidelberg 21/5(2015-05-01), 1-9 1610-2940 21:5<1 2015 21 894