caa a22 4500 60619519X CHVBK 20210128100918.0 cr unu---uuuuu 210128e20150601xx s 000 0 eng 10.1007/s10934-015-9949-1 doi (NATIONALLICENCE)springer-10.1007/s10934-015-9949-1 Electron emission properties of cold cathodes based on porous silicon layer processed by electrochemical oxidation and high-pressure water vapor annealing [Elektronische Daten] [Wenbo Hu, Xiaolei Zhao, Jinlong Fan, Shengli Wu, Jingtao Zhang] Porous silicon (PS) layers were processed by electrochemical oxidation (ECO) and high-pressure water vapor annealing (HWA) after they were prepared on n+-type silicon substrates with the double-cell anodic etching technique. The cathodes with a multilayer structure of Pt/PS layer/n+-Si/ohmic-contact electrode were fabricated, and their electron emission properties were investigated. The experimental results showed that it is difficult to get a sufficient and uniform oxidation for a PS layer by merely using ECO, while HWA can assist ECO to improve the oxidation quality of the PS layer, and the emission current density and efficiency of the porous silicon cathode can be increased by the combined treatment of HWA and ECO. Springer Science+Business Media New York, 2015 Porous silicon nationallicence Electrochemical oxidation nationallicence High-pressure water vapor annealing nationallicence Cold cathode nationallicence Hu Wenbo Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University, 710049, Xi'an, China aut Zhao Xiaolei Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University, 710049, Xi'an, China aut Fan Jinlong Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University, 710049, Xi'an, China aut Wu Shengli Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University, 710049, Xi'an, China aut Zhang Jingtao Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University, 710049, Xi'an, China aut Journal of Porous Materials Springer US; http://www.springer-ny.com 22/3(2015-06-01), 761-767 1380-2224 22:3<761 2015 22 10934 https://doi.org/10.1007/s10934-015-9949-1 text/html Onlinezugriff via DOI BK010053 XK010053 XK010000 Metadata rights reserved Springer special CC-BY-NC licence nationallicence 1 research-article jats NATIONALLICENCE NATIONALLICENCE NL-springer NATIONALLICENCE 856 40 https://doi.org/10.1007/s10934-015-9949-1 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Hu Wenbo Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University, 710049, Xi'an, China aut NATIONALLICENCE 700 1- Zhao Xiaolei Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University, 710049, Xi'an, China aut NATIONALLICENCE 700 1- Fan Jinlong Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University, 710049, Xi'an, China aut NATIONALLICENCE 700 1- Wu Shengli Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University, 710049, Xi'an, China aut NATIONALLICENCE 700 1- Zhang Jingtao Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University, 710049, Xi'an, China aut NATIONALLICENCE 773 0- Journal of Porous Materials Springer US; http://www.springer-ny.com 22/3(2015-06-01), 761-767 1380-2224 22:3<761 2015 22 10934