caa a22 4500 606209840 CHVBK 20210128101030.0 cr unu---uuuuu 210128e20151201xx s 000 0 eng 10.1007/s11220-014-0103-y doi (NATIONALLICENCE)springer-10.1007/s11220-014-0103-y Readout Circuits for Noise Compensation in ISFET Sensory System [Elektronische Daten] [M. Das, M. Bhuyan, C. Talukdar] This paper presents two different noise reduction techniques for ion sensitive field effect transistor (ISFET) readout configuration and their comparison. The proposed circuit configurations are immune to the noise generated from the ISFET sensory system and particularly to the low frequency pH dependent 1/f electrochemical noise. The methods used under this study are compensation of noise by differential OPAMP based and Wheatstone bridge circuit, where two identical commercial ISFET sensors were used. The statistical and frequency analysis of the data generated by this two methods were compared for different pH value ranging from pH 2 to 10 at room temperature, and it is found that the readout circuits are able to compensate the noise to a great extent. Springer Science+Business Media New York, 2014 Noise compensation nationallicence ISFET nationallicence Wheatstone bridge configuration nationallicence Differential OPAMP configuration nationallicence Das M. Department of Electronic and Communication Engineering, Tezpur University, 784028, Tezpur, Assam, India aut Bhuyan M. Department of Electronic and Communication Engineering, Tezpur University, 784028, Tezpur, Assam, India aut Talukdar C. Department of Electronic and Communication Engineering, Tezpur University, 784028, Tezpur, Assam, India aut Sensing and Imaging Springer US; http://www.springer-ny.com 16/1(2015-12-01), 1-24 1557-2064 16:1<1 2015 16 11220 https://doi.org/10.1007/s11220-014-0103-y text/html Onlinezugriff via DOI BK010053 XK010053 XK010000 Metadata rights reserved Springer special CC-BY-NC licence nationallicence 1 research-article jats NATIONALLICENCE NATIONALLICENCE NL-springer NATIONALLICENCE 856 40 https://doi.org/10.1007/s11220-014-0103-y text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Das M. Department of Electronic and Communication Engineering, Tezpur University, 784028, Tezpur, Assam, India aut NATIONALLICENCE 700 1- Bhuyan M. Department of Electronic and Communication Engineering, Tezpur University, 784028, Tezpur, Assam, India aut NATIONALLICENCE 700 1- Talukdar C. Department of Electronic and Communication Engineering, Tezpur University, 784028, Tezpur, Assam, India aut NATIONALLICENCE 773 0- Sensing and Imaging Springer US; http://www.springer-ny.com 16/1(2015-12-01), 1-24 1557-2064 16:1<1 2015 16 11220