caa a22 4500 606244069 CHVBK 20210128101328.0 cr unu---uuuuu 210128e20151201xx s 000 0 eng 10.1007/s12596-015-0307-0 doi (NATIONALLICENCE)springer-10.1007/s12596-015-0307-0 Effect of synthesis annealing temperature & Yb3+ concentration on photoluminescence properties of monoclinic Gd2O3 phosphor [Elektronische Daten] [Raunak Tamrakar, D. Bisen, Kanchan Upadhyay, Ishwar Sahu, Nameeta Brahme] The Yb3+ doped Gd2O3 phosphors have been prepared by combustion route method. The structural, morphological, compositional and vibrational analysis of the Yb3+ doped Gd2O3 phosphor have been studied by X-ray diffraction, transmission electron microscopy, energy dispersive X-ray and Fourier transform infrared spectroscopy. The results indicated that Yb3+ doped Gd2O3 phosphor synthesized by combustion had particle size ranging from 15 to 38nm, for the different concentration of the Yb3+. The optical and luminescence properties of prepared phosphors had been studied by using 980nm laser excitation. The effects of Yb3+ doping and annealing temperature on luminescence properties were also studied. Photoluminescence spectra showed that nanocrystals exhibited emission at near infrared region corresponding to different Stark labels of Yb3+ ions. The theoretical mechanism of luminescence was explored. The results indicate that this material may be suitable for infrared laser devices. The Optical Society of India, 2015 Gd2O3:Yb3+ nationallicence Combustion route method nationallicence X-Ray diffraction nationallicence Photoluminescence nationallicence Transmission Electron Microscope (TEM) nationallicence Tamrakar Raunak Department of Applied Physics, Bhilai Institute of Technology (Seth Balkrishan Memorial), Near Bhilai House, 491001, Durg, CG, India aut Bisen D. School of Studies in Physics and Astrophysics, Pt. Ravishankar Shukla University, 492010, Raipur, CG, India aut Upadhyay Kanchan Department of Chemistry, Shri Shankaracharya Vidhyalaya, Hudco, 490006, Bhilai, CG, India aut Sahu Ishwar School of Studies in Physics and Astrophysics, Pt. Ravishankar Shukla University, 492010, Raipur, CG, India aut Brahme Nameeta School of Studies in Physics and Astrophysics, Pt. Ravishankar Shukla University, 492010, Raipur, CG, India aut Journal of Optics Springer India 44/4(2015-12-01), 337-345 0972-8821 44:4<337 2015 44 12596 https://doi.org/10.1007/s12596-015-0307-0 text/html Onlinezugriff via DOI BK010053 XK010053 XK010000 Metadata rights reserved Springer special CC-BY-NC licence nationallicence 1 research-article jats NATIONALLICENCE NATIONALLICENCE NL-springer NATIONALLICENCE 856 40 https://doi.org/10.1007/s12596-015-0307-0 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Tamrakar Raunak Department of Applied Physics, Bhilai Institute of Technology (Seth Balkrishan Memorial), Near Bhilai House, 491001, Durg, CG, India aut NATIONALLICENCE 700 1- Bisen D. School of Studies in Physics and Astrophysics, Pt. Ravishankar Shukla University, 492010, Raipur, CG, India aut NATIONALLICENCE 700 1- Upadhyay Kanchan Department of Chemistry, Shri Shankaracharya Vidhyalaya, Hudco, 490006, Bhilai, CG, India aut NATIONALLICENCE 700 1- Sahu Ishwar School of Studies in Physics and Astrophysics, Pt. Ravishankar Shukla University, 492010, Raipur, CG, India aut NATIONALLICENCE 700 1- Brahme Nameeta School of Studies in Physics and Astrophysics, Pt. Ravishankar Shukla University, 492010, Raipur, CG, India aut NATIONALLICENCE 773 0- Journal of Optics Springer India 44/4(2015-12-01), 337-345 0972-8821 44:4<337 2015 44 12596