caa a22 4500 606244077 CHVBK 20210128101328.0 cr unu---uuuuu 210128e20151201xx s 000 0 eng 10.1007/s12596-015-0310-5 doi (NATIONALLICENCE)springer-10.1007/s12596-015-0310-5 Performance analysis of PIN photodiode under gamma radiation effects through modeling [Elektronische Daten] [Mohamed El_Tokhy, Imbaby Mahmoud] The main objective of this paper is to evaluate the p-i-n photodiode as a radiation detector for gamma ray spectroscopy. Therefore, the effect of incident gamma radiation on p-i-n photodiode performance characteristics is evaluated. The p-i-n photodiode is interesting from the point of view because it has numerous advantages over conventional semiconductor junction in terms of better long wavelength response, radiation hardness, high quantum efficiency, long lifetime and lower cost. Therefore, it is important to analyze and evaluate their characteristics. Models for this interesting type of detector were developed. These models describe a nontrivial evaluation of the most important characteristics. The minority carrier of the holes of the developed model is obtained by self-consistently solving the one-dimension diffusion equation. On other hand, it is used to calculate the diffusion length, diffusion current, drift current, total current, quantum efficiency and signals-to-noise ratio (SNR) as a function of the structural parameters. These parameters are the radiation fluence, photodiode area, bias voltage, spectral wavelength and the operating temperature. Also, optimization of various characteristics of p-i-n photodiode is of primary concern. A comparison between the results obtained by proposed models and that published are conducted and full agreement is observed. Therefore, it confirms our models and their validity on practical applications. The main strength of p-i-n photodiodes is that the gap between induced diffusion current and drift current is large. Moreover, the p-i-n photodiode has a comparable value of SNR accomplished with low values of corresponding bias voltage. The obtained results assure that p-i-n can be used as an efficient radiation detector. The Optical Society of India, 2015 Optical communication systems nationallicence Optoelectronic devices nationallicence Bit rate nationallicence Signal-to-noise ratio nationallicence El_Tokhy Mohamed Engineering Department, NRC, Atomic Energy Authority, P. No. 13759, Inshas, Egypt aut Mahmoud Imbaby Engineering Department, NRC, Atomic Energy Authority, P. No. 13759, Inshas, Egypt aut Journal of Optics Springer India 44/4(2015-12-01), 353-365 0972-8821 44:4<353 2015 44 12596 https://doi.org/10.1007/s12596-015-0310-5 text/html Onlinezugriff via DOI BK010053 XK010053 XK010000 Metadata rights reserved Springer special CC-BY-NC licence nationallicence 1 research-article jats NATIONALLICENCE NATIONALLICENCE NL-springer NATIONALLICENCE 856 40 https://doi.org/10.1007/s12596-015-0310-5 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- El_Tokhy Mohamed Engineering Department, NRC, Atomic Energy Authority, P. No. 13759, Inshas, Egypt aut NATIONALLICENCE 700 1- Mahmoud Imbaby Engineering Department, NRC, Atomic Energy Authority, P. No. 13759, Inshas, Egypt aut NATIONALLICENCE 773 0- Journal of Optics Springer India 44/4(2015-12-01), 353-365 0972-8821 44:4<353 2015 44 12596