caa a22 4500 606244158 CHVBK 20210128101328.0 cr unu---uuuuu 210128e20151201xx s 000 0 eng 10.1007/s12596-015-0261-x doi (NATIONALLICENCE)springer-10.1007/s12596-015-0261-x Optical second order nonlinearity in ultraviolet poled chalcogenide thin films [Elektronische Daten] [Sunita Rani, Devendra Mohan, Anil Kumar, Rajesh Punia] The second order optical nonlinear susceptibility measurement is done in (GeSe3.5)100-xBix (x = 10, 14) and ZnxSySe100-x-y (x = 2, y = 28; x = 4, y = 20; x = 6, y = 12; x = 8, y = 4) chalcogenide thin films. Thermal evaporation technique is used for the preparation of thin films. The dielectric constant at incident and second harmonic wavelength is calculated using "PARAV” computer software. The large second order nonlinearity is induced through ultraviolet poling by applying a dc electric field and irradiating with nitrogen laser at ~337nm. Thin film is irradiated with ~532nm wavelength of Nd: YAG laser and second harmonic signal at ~266nm wavelength alongwith incident light is obtained in reflection that is separated from ~532nm using a suitable optical filter. Second order nonlinear susceptibility is estimated by measuring the intensity of reflected beam of second harmonic signal that is found to increase with increase in Bi and Zn content in (GeSe3.5)100-xBix, and ZnxSySe100-x-y chalcogenide thin films, respectively. The induced second order optical nonlinearity shows the use of chalcogenide thin films in wavelength conversion and active devices. The Optical Society of India, 2015 Second harmonic generation nationallicence UV poling nationallicence Thin film nationallicence Dielectric constant nationallicence Rani Sunita Laser Laboratory, Department of Applied Physics, Guru Jambheshwar University of Science and Technology, 125001, Hisar, Haryana, India aut Mohan Devendra Laser Laboratory, Department of Applied Physics, Guru Jambheshwar University of Science and Technology, 125001, Hisar, Haryana, India aut Kumar Anil Research & Development Establishment (IRDE), Dehradun, India aut Punia Rajesh Laser Laboratory, Department of Applied Physics, Guru Jambheshwar University of Science and Technology, 125001, Hisar, Haryana, India aut Journal of Optics Springer India 44/4(2015-12-01), 417-422 0972-8821 44:4<417 2015 44 12596 https://doi.org/10.1007/s12596-015-0261-x text/html Onlinezugriff via DOI BK010053 XK010053 XK010000 Metadata rights reserved Springer special CC-BY-NC licence nationallicence 1 research-article jats NATIONALLICENCE NATIONALLICENCE NL-springer NATIONALLICENCE 856 40 https://doi.org/10.1007/s12596-015-0261-x text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Rani Sunita Laser Laboratory, Department of Applied Physics, Guru Jambheshwar University of Science and Technology, 125001, Hisar, Haryana, India aut NATIONALLICENCE 700 1- Mohan Devendra Laser Laboratory, Department of Applied Physics, Guru Jambheshwar University of Science and Technology, 125001, Hisar, Haryana, India aut NATIONALLICENCE 700 1- Kumar Anil Research & Development Establishment (IRDE), Dehradun, India aut NATIONALLICENCE 700 1- Punia Rajesh Laser Laboratory, Department of Applied Physics, Guru Jambheshwar University of Science and Technology, 125001, Hisar, Haryana, India aut NATIONALLICENCE 773 0- Journal of Optics Springer India 44/4(2015-12-01), 417-422 0972-8821 44:4<417 2015 44 12596